Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-14T06:11:35.674Z Has data issue: false hasContentIssue false
  • English
  • Français

Orientation Control of Lead Zirconate Titanate Film by Combination of Sol-Gel and Sputtering Deposition

Published online by Cambridge University Press:  03 March 2011

Chee-Sung Park ,
Sang-Wook Kim ,
Gun-Tae Park ,
Jong-Jin Choi  and
Hyoun-Ee Kim
Chee-Sung Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Sang-Wook Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Gun-Tae Park
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Jong-Jin Choi
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Hyoun-Ee Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
Get access

Abstract

Highly oriented lead zirconate titanate (PZT) films were fabricated on a platinized silicon substrate using a combination of sol-gel and radio frequency (RF) magnetron sputtering deposition methods. A sol-gel derived PZT layer highly oriented to the (100) plane was deposited as a seed layer, and PZT with the same composition then was deposited on the seed layer by RF-magnetron sputtering. The film deposited on the seed layer showed a strong (100) preferred orientation, while the film deposited without the seed layer showed a (111) preferred orientation. Furthermore, a thick PZT film of up to 4 μm was able to be deposited without cracks by using the seed layer. The piezoelectric property of the (100) oriented film was much better than that of the (111) oriented film.

Keywords

PiezoelectricThin film
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 1 , January 2005 , pp. 243 - 246
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Polla, D.L. and Francis, L.F.: Ferroelectric thin films in microelectromechanical systems applications. MRS Bull. 21, 59 (1996).Google Scholar
2Spearing, S.M.: Materials issues in microelectromechanical systems (MEMS). Acta Mater. 48, 179 (2000).Google Scholar
3Du, X., Belegundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties in lead zirconate titanate: theoretical expectation for thin films. Jpn. J. Appl. Phys. 36, 5580 (1997).CrossRefGoogle Scholar
4Du, X., Zheng, J., Belegundu, U. and Uchino, K.: Crystal orientation dependence of piezoelectric properties of lead zirconate titanate near the morphotropic phase boundary. Appl. Phys. Lett. 72, 2421 (1998).CrossRefGoogle Scholar
5Park, S-E. and Shrout, T.R.: Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals. J. Appl. Phys. 82, 1804 (1997).CrossRefGoogle Scholar
6Chen, S-Y. and Chen, I-W.: Temperature-time texture transition of Pb(Zr1-xTix)O3 thin films: II, Heat treatment and compositional effects. J. Am. Ceram. Soc. 77, 2337 (1994).Google Scholar
7Suzuki, H., Kaneko, S., Murakami, K. and Hayashi, T.: Low-temperature processing of highly oriented Pb(ZrxTi1-x)O3 thin film with multi-seeding layers. Jpn. J. Appl. Phys. 36, 5803 (1997).CrossRefGoogle Scholar
8Park, G-T., Choi, J-J., Park, C-S., Lee, J-W. and Kim, H-E.: Piezoelectric and ferroelectric properties of 1 μm-thick PZT film fabricated by a double spin coating process. Appl. Phys. Lett. 85, 2322 2004 .Google Scholar
9Takenaka, S. and Kozuka, H.: Sol-gel preparation of single-layer, 0.75 μm-thick lead zirconate titanate films from lead nitrate-titanium and zirconium alkoxide solutions containing polyvinylpyrrolidone. Appl. Phys. Lett. 79, 3485 (2001).Google Scholar
10Park, G-T., Choi, J-J., Ryu, J., Fan, H. and Kim, H-E.: Measurement of piezoelectric coefficients of lead zirconate titanate thin films by strain-monitoring pneumatic loading method. Appl. Phys. Lett. 80, 4606 (2002).CrossRefGoogle Scholar
11Wang, Z.J., Kokawa, H. and Maeda, R.: Growth of lead zirconate titanate thin films by hybrid processing: Sol-gel method and pulsed-laser deposition. J. Cryst. Growth 262, 359 (2004).Google Scholar
12Park, B.H., Hyun, S.J., Moon, C.R., Cheo, B-D., Lee, J., Kim, C.Y., Jo, W. and Noh, T.W.: Imprint failures and asymmetric electrical properties induced by thermal process in epitaxial Bi4Ti3O12 thin films. J. Appl. Phys. 84, 4428 (1998).Google Scholar
13Gruverman, A., Rodriguez, B.J., Kingon, A.I., Nemanich, R.J., Tagantsev, A.K., Cross, J.S. and Tsukada, M.: Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors. Appl. Phys. Lett. 83, 728 (2003).Google Scholar
14Taylor, D.V. and Damjanovic, D.: Piezoelectric properties of rhombohedral Pb(Zr,Ti)O3 thin films with (100), (111), and “Random”. Crystallographic Orientation. Appl. Phys. Lett. 76, 1615 (2000).CrossRefGoogle Scholar