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Raman scattering and electrical conductivity in highly disordered activated carbon fibers

Published online by Cambridge University Press:  31 January 2011

A.W.P. Fung ,
A.M. Rao ,
K. Kuriyama ,
M.S. Dresselhaus ,
G. Dresselhaus ,
M. Endo  and
N. Shindo
A.W.P. Fung
Affiliation:
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
A.M. Rao
Affiliation:
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
K. Kuriyama
Affiliation:
Center for Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M.S. Dresselhaus
Affiliation:
Department of Electrical Engineering and Computer Science and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
G. Dresselhaus
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
M. Endo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering, Shinshu University, Nagano 380, Japan
N. Shindo
Affiliation:
Osaka Gas Co., Konohana-ku, Osaka 544, Japan

Abstract

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Because of their unusually large specific surface area (SSA), Activated Carbon Fibers (ACF's) have a huge density of micropores and defects. The Raman scattering technique and low-temperature dc electrical conductivity measurements were used as characterization tools to study the disorder in ACF's with SSA ranging from 1000 m2/g to 3000 m2/g. Two peaks were observed in every Raman spectrum for ACF's and they could be identified with the disorder-induced peak near ∼1360 cm−1 and the Breit–Wigner–Fano peak near ∼1610 cm−1 associated with the Raman-active E2g2 mode of graphite. The graphitic nature of the ACF's is shown by the presence of a well-defined graphitic structure with La values of 20–30 Å. We observed that the Raman scattering showed more sensitivity to the precursor materials than to the SSA of the ACF's. From 4 K to room temperature, the dc electrical resistivity in ACF's is observed to follow the exp [(T0/T)1/2] functional form and it can be accounted for by a charge-energy-limited tunneling conduction mechanism. Coulomb-gap conduction and n-dimensional (n ≤ 3) variable-range hopping conduction models were also considered but they were found to give unphysical values for their parameters.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 3 , March 1993 , pp. 489 - 500
Copyright
Copyright © Materials Research Society 1993

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