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Single asperity tribochemical wear of silicon by atomic force microscopy

Published online by Cambridge University Press:  31 January 2011

Futoshi Katsuki
Futoshi Katsuki*
Affiliation:
Corporate Research and Development Laboratories, Sumitomo Metal Industries Limited, Amagasaki, 660-0891, Japan
*
a) Address all correspondence to this author. e-mail: katsuki-fts@sumitomometals.co.jp
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Abstract

Measurements of single asperity wear on oxidized silicon surface in aqueous potassium hydroxide (KOH) using atomic force microscopy (AFM), where the single crystal silicon tip was used both to tribologically load and image the surface, is presented. AFM was also operating in the lateral (frictional) force mode to investigate the pH dependence of kinetic friction between the tip and the SiO2 surface. It was shown that the Si tip wear amount strongly depended on the solution pH value and was at a maximum at around pH 10. It was also found that the Si removal volume in mol was approximately equal to that of SiO2 irrespective of the solution pH value. This equality implies that the formation of the Si–O–Si bridge between one Si atom of the tip and one SiO2 molecule of the specimen at the wear interface. The surface of the Si tip is then oxidized. Finally, the bond rupture by the tip movement will occur, the dimeric silica (OH)3Si–O–Si(OH)3, including the Si–O–Si bridge, is dissolved in the KOH solution. The frictional signal is also sensitive to the pH values of the solution and peaked at around pH 10. These results indicate that the removal behavior of the Si tip and SiO2 surface would be affected by the frictional force between the Si and the SiO2, because of an increased liquid temperature and a compressive stress in Si and SiO2 networks. Strong influence is observed by the pH of the ambient solution confirming the important role of the OH− in the wear mechanism. Pressure dependence of the microwear behavior under aqueous electrolyte solutions has also been investigated. A microscopic removal mechanism, which is determined by interplay of the diffusion of water in Si and SiO2, is presented.

Keywords

CMPScanning-probe microscopy (SPM)Si
Type
Articles
Information
Journal of Materials Research , Volume 24 , Issue 1 , January 2009 , pp. 173 - 178
Copyright
Copyright © Materials Research Society 2009

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References

REFERENCES

1.Mendel, E.: Polishing of silicon. Solid State Technol. 10, 27 1967Google Scholar
2.Patrick, W.J., Guthrie, W.L., Standley, C.L., Schiable, P.M.: Application of chemical mechanical polishing to the fabrication of VLSI circuit interconnections. J. Electrochem. Soc. 138, 1778 1991CrossRefGoogle Scholar
3.Ito, S., Tomozawa, M.: Stress corrosion of silica glass. J. Am. Ceram. Soc. 64, C-160 1981CrossRefGoogle Scholar
4.Nogami, M., Tomozawa, M.: Effect of stress on water diffusion in silica glass. J. Am. Ceram. Soc. 67, 151 1984CrossRefGoogle Scholar
5.Cook, L.M.: Chemical processes in glass polishing. J. Non-Cryst. Solids 120, 152 1990CrossRefGoogle Scholar
6.Pietsch, G.J., Higashi, G.S., Chabal, Y.J.: Chemomechanical polishing of silicon: Surface termination and mechanism of removal. Appl. Phys. Lett. 64, 3115 1994CrossRefGoogle Scholar
7.Pietsch, G.J., Chabal, Y.J., Higashi, G.S.: The atomic-scale removal mechanism during chemo-mechanical polishing of Si(100) and Si(111). Surf. Sci. 331–333, 395 1995CrossRefGoogle Scholar
8.Katsuki, F., Kamei, K., Saguchi, A., Takahashi, W., Watanabe, J.: AFM studies on the difference in wear behavior between Si and SO2 in KOH solution. J. Electrochem. Soc. 147, 2328 2000CrossRefGoogle Scholar
9.Katsuki, F., Saguchi, A., Takahashi, W., Watanabe, J.: The atomic-scale removal mechanism during Si tip scratching on Si and SiO2 surfaces in aqueous KOH with an atomic force microscope. Jpn. J. Appl. Phys. 41, 4919 2002CrossRefGoogle Scholar
10.Kaneko, R., Miyamoto, T., Hamada, E.: MicrowearHandbook of Micro/Nano Tribology edited by B. Bhushan CRC Press Boca Raton, FL 1995 183221Google Scholar
11.Maw, W., Stevens, F., Langford, S.C., Dickinson, J.T.: Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy. J. Appl. Phys. 92, 5103 2002CrossRefGoogle Scholar
12.Stevens, F., Langford, S.C., Dickinson, J.T.: Tribochemical wear of sodium trisilicate glass at the nanometer size scale. J. Appl. Phys. 99, 023529 2006CrossRefGoogle Scholar
13.Abiade, J.T., Yeruva, S., Moudgil, B., Kumar, D., Singh, R.K.: Characterization of the chemical effects of ceria slurries for chemical mechanical polishingChemical-Mechanical Planarization—Integration, Technology and Reliability edited by A. Kumar, J.A. Lee, Y.S. Obeng, I. Vos, and E.C. Johns Mater. Res. Soc. Symp. Proc. 867, Warrendale, PA 2005 W.8.3.1 69Google Scholar
14.Marti, A., Hähner, G., Spencer, N.D.: Sensitivity of frictional forces to pH on a nanometer scale: A lateral force microscopy study. Langmuir 11, 4632 1995CrossRefGoogle Scholar
15.Hähner, G., Marti, A., Spencer, N.D.: The influence of pH on friction between oxide surfaces in electrolytes, studied with lateral force microscopy: Application as a nanochemical imaging technique. Tribol. Lett. 3, 359 1997CrossRefGoogle Scholar
16.Imoto, R., Stevens, F., Langford, S., Dickinson, T.: AFM investigations of chemical-mechanical processes on silicon(100) surfacesAdvances and Challenges in Chemical Mechanical Planarization edited by G. Zwicker, C. Borst, L. Economikos, and A. Philipossian Mater. Res. Soc. Symp. Proc. 991, Warrendale, PA 2007 C04-01 93Google Scholar
17.Gräf, D., Grundner, M., Schulz, R.: Reaction of water with hydrofluoric acid treated silicon (111) and (100) surfaces. J. Vac. Sci. Technol., A 7, 807 1989CrossRefGoogle Scholar
18.Trogolo, J.A., Rajan, K.: Near surface modification of silica structure induced by chemical/mechanical polishing. J. Mater. Sci. 29, 4454 1994CrossRefGoogle Scholar