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Sn-doped BaO–TiO2–ZnO Microwave Ceramics

Published online by Cambridge University Press:  31 January 2011

Wu Shunhua ,
Wang Guoqing  and
Zhao Yushuang
Wu Shunhua
Affiliation:
College of Electronics and Information Engineering, Tianjin University, Tianjin 300072, People's Republic of China
Wang Guoqing
Affiliation:
College of Electronics and Information Engineering, Tianjin University, Tianjin 300072, People's Republic of China
Zhao Yushuang
Affiliation:
College of Electronics and Information Engineering, Tianjin University, Tianjin 300072, People's Republic of China
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Abstract

Sn-doped BaO–TiO2–ZnO (BTZ) microwave ceramic materials were investigated as a function of SnO2 content. Addition of a small amount of SnO2 (0.01–0.06 wt%) lowered the sintering temperature of the system to 1160 °C and also greatly reduced the dielectric loss (tan δ), which is closely related to the insulation resistivity. The Sn-doped BTZ materials were found to have excellent dielectric properties at 1 GHz with dielectric constant Ε ≈tangent tan δ ≤ 1 × 10−4, temperature coefficient of dielectric constant, αΕ = 0 ± 30 ppm/°C, and volume resistivity ρv ≥ 1013 ω cm.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 6 , June 2002 , pp. 1550 - 1552
Copyright
Copyright © Materials Research Society 2002

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