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Solid-state growth of nickel silicide nanowire by the metal-induced growth method

Published online by Cambridge University Press:  03 March 2011

Joondong Kim ,
Jong-Uk Bae ,
Wayne A. Anderson ,
Hyun-Mi Kim  and
Ki-Bum Kim
Joondong Kim
Affiliation:
Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260
Jong-Uk Bae
Affiliation:
Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260
Wayne A. Anderson*
Affiliation:
Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, New York 14260
Hyun-Mi Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
Ki-Bum Kim
Affiliation:
School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea
*
a) Address all correspondence to this author. e-mail: waanders@eng.buffalo.edu
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Abstract

Unique nanowire growth was accomplished at 575 °C by the metal-induced growth (MIG) method. This involved a spontaneous reaction between metal and Si. The deposited metal worked as a catalyst layer to grow nanowires in the solid state. Various metals (Ni, Co, and Pd) were used in MIG nanowire fabrication, and the Ni-induced case was successful in demonstrating that metal species should be the dominant factor for growing nanowires. The Ni to Si composition was studied by energy dispersive spectroscopy showing the Ni diffusion inside the nanowire as well as the Ni silicide layer. The practical application of the MIG nanowire was proved by fabricating nanoscale contacts.

Keywords

NiSelf-assemblySi
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2936 - 2940
Copyright
Copyright © Materials Research Society 2006

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