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Structural and Electronic Properties of (CdTe)1−x(In2Te3)x Films Grown by Close-spaced vapor Transport Combined with Free Evaporation

Published online by Cambridge University Press:  31 January 2011

M. Zapata-Torres
Affiliation:
Instituto de Fisica de São Carlos-Universidade de São Paulo, Caixa Postal 369, CEP 13560-940, São Carlos, SP, Brazil, and Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Altamira, Km. 14.5 carretera Tampico-puerto Altamira, Altamira, Tamaulipas, C.P. 89600, Mexico
Y. P. Mascarenhas
Affiliation:
Instituto de Fisica de São Carlos-Universidade de São Paulo, Caixa Postal 369, CEP 13560-940, São Carlos, SP, Brazil
M. A. Santana-Aranda
Affiliation:
Departamento de Fisica, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Apdo. Postal 14-740, México D.F. 07000, Mexico
J. Luyo-Alvarado
Affiliation:
Departamento de Fisica, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Apdo. Postal 14-740, México D.F. 07000, Mexico
M. Melé-Lirandez
Affiliation:
Departamento de Fisica, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Apdo. Postal 14-740, México D.F. 07000, Mexico
A. Zapata-Navarro
Affiliation:
Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Altamira, Km. 14.5 carretera Tampico-puerto Altamira, Altamira, Tamaulipas, 89600, Mexico
S. Jimé-Sandovalnez
Affiliation:
Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Unidad Querétaro, Apdo. Postal 1-1010, Querétaro, Qro. 76001, Mexico
R. Castro-Rodriguez
Affiliation:
Departamento de Fisica Aplicada, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Unidad Mérida, Apdo. Postal 73 Cordemex, Mérida, Yuc. 97310, Mexico
J. L. Peña
Affiliation:
Centro de Investigación en Ciencia Aplicada y Tecnología Avanzada del Instituto Politécnico Nacional, Altamira, Km. 14.5 carretera Tampico-puerto Altamira, Altamira, Tamaulipas, 89600, Mexico, and Departamento de Fisica AplÞcada, Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional, Unidad Mérida, Apdo. Postal 73 Cordemex, Mérida, Yuc. 97310, Mexico
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Abstract

The structural and electronic properties of (CdTe)1−x(In2Te3)x thin films as a function of substrate temperature were studied using x-ray diffraction, energy dispersive x-ray analysis, and Raman, transmission, and modulated transmission spectroscopies. The films were grown by the close-spaced vapor transport technique combined with free evaporation; CdTe and In2Te3 were used as sources. From x-ray diffraction the presence of mixed phases and differences in composition were detected, and good correlation with Raman spectroscopy was found. Transmission spectroscopy suggested the possibility of a modulation of the band gap of the alloy from a value as low as 0.5 eV up to 1.5 eV. Single-phase films presented a direct band gap of around 1.15 eV, as obtained from modulated transmission measurements.

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Articles
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1.Mason, D.R. and O'Kane, D.F., Proceedings of the International Conference on Semiconductor Physics, Prague 1960 (Czechoslovak Academy of Science, Prague, Czechoslovakia, 1961), p. 1025.Google Scholar
2.O'Kane, D.F. and Mason, D.R., J. Electrochem. Soc. 110, 1132 (1963).CrossRefGoogle Scholar
3.Gurevich, Y.G., Koskhin, V.M., and Volovichev, I.N., Solid-State Electron. 38, 235 (1995).CrossRefGoogle Scholar
4.Volovichev, I.N., Gurevich, Y.G., and Koskhin, V.M., Microelectron. J. 29, 535 (1999).CrossRefGoogle Scholar
5.Iwamura, Y., Jpn. J. Appl. Phys. 16, 1489 (1977).CrossRefGoogle Scholar
6.Iwamura, Y. and Moriyama, M., Jpn. J. Appl. Phys. 20, 2435 (1981).CrossRefGoogle Scholar
7.Weitze, D. and Leute, V., J. Alloys Comp. 236, 229 (1996).CrossRefGoogle Scholar
8.Castro-Rodríguez, R., Rodríguez-Castellanos, C., Zapata-Torres, M., Zapata-Navarro, A., Mustre de León, J., Oliva, A.I., and Peña, J.L., Rev. Mex. Fis. 41, 396 (1995).Google Scholar
9.Zapata-Torres, M., Castro-Rodríguez, R., Melendez-Lira, M., Jimenez-Sandoval, S., Zapata-Navarro, A., and Peña, J.L., Thin Solid Films 358, 12 (2000).CrossRefGoogle Scholar
10.Larson, A.C. and Von Dreele, R.B., GSAS, Generalized Structure Analysis System, Document LAUR 86–748 (Los Alamos National Laboratory, Los Alamos, NM, 1993).Google Scholar
11.Hahn, H., Günter, F., Wilhelm, K., Störger, A.D., and Stöerger, G., Z. Anorg. Allg. Chem. 279, 241 (1955).CrossRefGoogle Scholar
12.Chattopadhyay, T., Santandrea, R.P., and von Schnerong, H.G., J. Phys. Chem. Solids 46, 351 (1985).CrossRefGoogle Scholar
13.Lambert, J.F., Huong, P.V., Limtrakul, J., and Launay, J.C., J. Mol. Struct. 294, 159 (1993).CrossRefGoogle Scholar
14.Nizametdinova, M.A., Phys. Status Solidi (b) 97, K9 (1980).CrossRefGoogle Scholar
15.Islam, S.S., Rath, S., Jain, K.P., Abbi, S.C., Julien, C., and Balkanski, M., Phys Rev. B 46, 4982 (1992).CrossRefGoogle Scholar
16.Pankove, J.I., Optical Processes in Semiconductors (Dover, New York, 1971).Google Scholar
17.Aspnes, D.E., in Handbook of Semiconductors, edited by Moss, T.S. (North Holland, New York, 1980), Vol. 2.Google Scholar
18.Irribarren, A., Riech, I., Hernández, M.P., Castro-Rodríguez, R., Peña, J.L., and Zapata-Torres, M., J. Vac. Sci. Technol. A 17, 3433 (1999).CrossRefGoogle Scholar