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A study on the residual stress measurement methods on chemical vapor deposition diamond films

Published online by Cambridge University Press:  31 January 2011

Jung Geun Kim  and
Jin Yu
Jung Geun Kim
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 305–701, Kusung-Dong 373–1, Taejon, Korea
Jin Yu
Affiliation:
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 305–701, Kusung-Dong 373–1, Taejon, Korea
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Abstract

Diamond films were deposited on the p-type Si substrate with the hot filament chemical vapor deposition (HFCVD). Residual stresses in the films were measured in air by the laser curvature, the x-ray diffraction (XRD) dϕψ − sin2ψ, and the Raman peak shift methods. All of the measuring methods showed similar behaviors of residual stress that changed from a compressive to a tensile stress with increasing the film thickness. However, values of residual stresses obtained through the Raman and XRD methods were 3–4 times higher than those of the curvature method. These discrepancies involved the setting of materials constants of CVD diamond film, and determination of a peak shifting on the XRD and Raman method. In order to elucidate the disparity, we measured a Young's moduli of diamond films by using the sonic resonance method. In doing so, the Raman and XRD peak shift were calibrated by bending diamond/Si beams with diamond films by a known amount, with stress levels known a priori from the beam theory, and by monitoring the peak shifts simultaneously. Results of each measuring method showed well coincidental behaviors of residual stresses which have the stress range from −0.5 GPa to +0.7 GPa, and an intrinsic stress was caused about +0.7 GPa with tensile stress.

Type
Articles
Information
Journal of Materials Research , Volume 13 , Issue 11 , November 1998 , pp. 3027 - 3033
Copyright
Copyright © Materials Research Society 1998

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