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Thermogravimetric analysis of the oxidation of CVD diamond films

Published online by Cambridge University Press:  31 January 2011

Curtis E. Johnson ,
Michael A.S. Hasting  and
Wayne A. Weimer
Curtis E. Johnson
Affiliation:
Chemistry Division, Research Department, Naval Weapons Center, China Lake, California 93555
Michael A.S. Hasting
Affiliation:
Chemistry Division, Research Department, Naval Weapons Center, China Lake, California 93555
Wayne A. Weimer
Affiliation:
Chemistry Division, Research Department, Naval Weapons Center, China Lake, California 93555
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Abstract

Diamond films grown by microwave plasma assisted chemical vapor deposition (CVD) were studied by thermogravimetric analysis under an air atmosphere. Oxidation rates were measured between 600 and 750 °C to determine an activation energy of 213 kJ/mol which is similar to that reported for natural diamond. The rate of oxidation increases with increasing surface area and decreases with increasing humidity. The oxidation proceeds by etching pits into the film, creating a highly porous structure. Graphitization was not detected in partially oxidized samples by Raman or Auger electron spectroscopy. A film that was heated to 1170 °C under nitrogen remained IR transmissive.

Type
Diamond and Diamond-Like Materials
Information
Journal of Materials Research , Volume 5 , Issue 11 , November 1990 , pp. 2320 - 2325
Copyright
Copyright © Materials Research Society 1990

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References

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