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Upgrading the Triboluminescence of ZnS:Mn Film by Optimization of Sputtering and Thermal Annealing Conditions

Published online by Cambridge University Press:  31 January 2011

O. Agyeman ,
C. N. Xu ,
M. Suzuki  and
X. G. Zheng
O. Agyeman
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST, Kyushu, Shuku 807–1, Tosu, Saga 841–0052, Japan, andDepartment of Physics, Saga University, Saga 840–8502, Japan
C. N. Xu*
Affiliation:
National Institute of Advanced Industrial Science and Technology, AIST, Kyushu, Shuku 807–1, Tosu, Saga 841–8502, Japan
M. Suzuki
Affiliation:
Department of Physics, Saga University, Saga 840–8502, Japan
X. G. Zheng
Affiliation:
Department of Physics, Saga University, Saga 840–8502, Japan
*
a)Address all correspondence to this author. e-mail: cn-xu@aist.go.jp
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Extract

A statistical method of the design of experiments and analysis of variance (ANOVA) was used to obtain optimized sputtering conditions for oriented ZnS thin films doped with 5% manganese on glass substrates. The effects on the five sputtering factors—substrate temperature, radio frequency power, sputtering pressure, sputtering time, and pre-sputtering time—were simultaneously investigated by using the design of experiments and ANOVA. Through only 16 experiments, it was proved statistically at the 5% level that the substrate temperature was the only significant control factor. ZnS films were then deposited under the optimized sputtering conditions on fused quartz and thermally annealed in a reducing ambient (5% H2 diluted in Ar) at 500, 600, 700, and 800 °C. It was found that the crystallinity and triboluminescence intensity of the films were enhanced by postannealing up to 700 °C.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 5 , May 2002 , pp. 959 - 963
Copyright
Copyright © Materials Research Society 2002

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