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Vacancy structures on the GaN(0001) surface

Published online by Cambridge University Press:  31 January 2011

William E. Packard ,
John D. Dow ,
Kathleen Doverspike ,
Ray Kaplan  and
Ruth Nicolaides
William E. Packard
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
John D. Dow
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504
Kathleen Doverspike
Affiliation:
Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375
Ray Kaplan
Affiliation:
Naval Research Laboratory, 4555 Overlook Avenue, S.W., Washington, DC 20375
Ruth Nicolaides
Affiliation:
Institute for Postdoctoral Studies, 1842 Estate Enighed, Cruz Bay, St. John, U.S. Virgin Islands 00830
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Abstract

Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to the step edges, (ii) row defects spaced about 16 Å that intersect the steps at an angle of 30°, and (iii) “oval” defects that result from intersections of lines of vacancies (oriented at 60° with respect to step edges) with the row defects.

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Type
Articles
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Journal of Materials Research , Volume 12 , Issue 3 , March 1997 , pp. 646 - 650
Copyright
Copyright © Materials Research Society 1997

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References

1.Doverspike, K., Rowland, L. B., Gaskill, D. K., and Freitas, J. A. Jr, J. Electron. Mater. 24, 269 (1995).Google Scholar
2.Khan, M. A., Kuznia, J. N., Olson, D. T., and Kaplan, R., J. Appl. Phys. 73, 3108 (1993).CrossRefGoogle Scholar
3.Neugebauer, J., Northrup, J. E., and Van de Walle, C. G., Bull. Am. Phys. Soc. 40, 127 (1995).Google Scholar
4.Packard, W. E., Dow, J. D., Nicolaides, R., Doverspike, K., and Kaplan, R., Superlatt. Microstruct. 20, 145 (1996).Google Scholar
5.Feil, H., Zandvliet, H. J. W., Tsai, M-H., Dow, J. D., and Tsong, I. S. T., Phys. Rev. Lett. 69, 3076 (1992).CrossRefGoogle Scholar
6. Note that in the absence of a step, with its associated strain energy, the model narrow striations and row defects are degenerate.Google Scholar
7.Jenkins, D. W. and Dow, J. D., Phys. Rev. B 39, 3317 (1989).Google Scholar
8.Jenkins, D. W., Dow, J. D., and Tsai, M-H., J. Appl. Phys. 72, 4130 (1992).Google Scholar
9.Jenkins, D. W., Dow, J. D., and Lent, C. S., unpublished.Google Scholar
10.Dow, J. D. and Allen, R. E., Appl. Phys. Lett. 41, 672 (1982).Google Scholar
11.Akasaki, I., Amano, H., Kito, M., and Hiramoto, K., J. Lumin. 48, 666 (1990).Google Scholar
12.Ren, S. Y. and Dow, J. D., Appl. Phys. Lett. 69, 251 (1996); J. Electron. Mater. (in press).Google Scholar
13.Liang, Y., Packard, W. E., Dow, J. D., Ho, H., and Lapeyre, G. J., Phys. Rev. B 48, 11942 (1993).CrossRefGoogle Scholar