Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-28T16:41:09.670Z Has data issue: false hasContentIssue false
  • English
  • Français

Vapor deposition of parylene-F using hydrogen as carrier gas

Published online by Cambridge University Press:  26 July 2012

D. Mathur ,
G-R. Yang  and
T-M. Lu
D. Mathur
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and The Howard P.Isermann Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180
G-R. Yang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180
T-M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing, and Electronic Media and Department of Physics, Rensselaer Polytechnic Institute, Troy, New York 12180
Get access

Extract

A new method for depositing parylene-F (PA-F) thin films on silicon substrates has been explored. Hydrogen has been used as a carrier gas along with liquid precursors, dibromotetrafluoro-p-xylene and 1,4-bis(trifluoromethyl)benzene, to deposit PA-F. The properties of this film have been compared with the films obtained by the Gorham dimer method and the liquid precursor method using FTIR, XPS, and XRD. The PA-F films deposited by the dimer or liquid precursor acquired some kind of microcrystallinity on annealing. However, the PA-F films deposited in the presence of hydrogen were amorphous on annealing. This property could be potentially exploited for application in microelectronic device fabrication.

Type
Articles
Information
Journal of Materials Research , Volume 14 , Issue 1 , January 1999 , pp. 246 - 250
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Gorham, W. F. (to Union Carbide Corp.), US Patent No. 3,342,754 (19 September 1967).Google Scholar
2.Gorham, W. F. and Yeh, J. T. C., J. Org. Chem. 34, 2366 (1965);Google Scholar
Gorham, W. F., J. Poly. Sci., Pt. A-1 4, 3027 (1966).Google Scholar
3.You, L., Yang, G-R., Lang, C-I., Lu, T-M., Moore, J. A., and McDonald, J.F. P., U.S. Patent 5,268,202, Dec. 7, 1993.Google Scholar
4.Wong, C. P., Polymers for Electronic and Photonic Applications (Academic Press, San Diego, CA, 1993);Google Scholar
Lu, T-M., Murarka, S., Kuan, T. S., and Ting, C., Low-Dielectric Constant Materials: Synthesis and Applications in Microelectronics, edited by Lu, T-M., Murarka, S. P., Kuan, T.S., and Ting, C.H. (Mater. Res. Soc. Symp. Proc. 381, Pittsburgh, PA, 1995).Google Scholar
5.Lu, T-M., McDonald, J.F., Dabral, S., Yang, G-R., You, L., and Bai, P., in Advanced Metallizations in Microelectronics, edited by Katz, A., Murarka, S. P., and Appelbaum, A. (Mater. Res. Soc. Symp. Proc. 181, Pittsburgh, PA, 1990), p. 55.Google Scholar
6.Wu, P. K., Yang, G-R., You, L., Mathur, D., Cocoziello, A., Lang, C-I., Moore, J. A., Lu, T-M., and Bakhru, H., J. Elec. Mater. 25, 1778 (1996).Google Scholar