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Applications of Ion Microscopy and In Situ Electron Microscopy to the Study of Electronic Materials and Devices

Published online by Cambridge University Press:  28 July 2005

R. Hull ,
J. Demarest ,
D. Dunn ,
E.A. Stach  and
Q. Yuan
R. Hull
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442
J. Demarest
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442
D. Dunn
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442
E.A. Stach
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442
Q. Yuan
Affiliation:
Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22903-2442
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Abstract

We discuss the application of ion microscopy and in situ electron microscopy to the study of electronic and optical materials and devices. We demonstrate how the combination of in situ transmission electron microscopy and focused ion beam microscopy provides new avenues for the study for such structures, enabling extension of these techniques to the study of dopant distributions, nanoscale stresses, three-dimensional structural and chemical reconstruction, and real-time evolution of defect microstructure. We also discuss in situ applications of thermal, mechanical, electrical, and optical stresses during transmission electron microscopy imaging.

Keywords

semiconductorsdopingdislocationselectronic devicesoptoelectronic devicesepitaxy
Type
1998 ASU ELECTRON MICROSCOPY WORKSHOP
Information
Microscopy and Microanalysis , Volume 4 , Issue 3 , June 1998 , pp. 308 - 316
Copyright
© 2005 Microscopy Society of America

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