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Focused Ion Beam Sectioning and Lift-out Method for Copper and Resist Vias in Organic Low-k Dielectrics

Published online by Cambridge University Press:  06 December 2002

E.J. Crawford ,
L. Gignac ,
K. Barth ,
J. Petrus  and
E. Levine
E.J. Crawford
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
L. Gignac
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
K. Barth
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
J. Petrus
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
E. Levine
Affiliation:
IBM Corporation, Hopewell Junction, NY 12533
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Abstract

The focused ion beam lift-out technique for scanning electron microscope (SEM) and transmission electron microscope (TEM) sample preparation was shown to be applicable to copper/low-k dielectric semiconductor technology. High resolution SEM, TEM, and scanning transmission electron microscope analyses were performed on metal contacts and resist vias with no evidence of the interface damage or metal smearing commonly observed with mechanical polishing. Ion milling of the sample ex situ to the substrate provided decoration and adjustment of the exposed plane of the section when necessary for SEM analysis.

Keywords

focused ion beamlift-outtransmission electron microscopyspecimen preparationmicroelectronic devicelow-k dielectricinterconnect via
Type
Research Article
Information
Microscopy and Microanalysis , Volume 8 , Issue 6 , December 2002 , pp. 502 - 508
Copyright
© 2002 Microscopy Society of America

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