Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-10T15:13:54.634Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphization Induced by Focused Ion Beam Milling in Metallic and Electronic Materials

Published online by Cambridge University Press:  06 August 2013

Yoon Huh ,
Ki Jung Hong  and
Kwang Soo Shin
Yoon Huh*
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
Ki Jung Hong
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
Kwang Soo Shin
Affiliation:
Center for Analysis and Assessment, Research Institute of Industrial Science and Technology (RIST), Pohang 790-330, Republic of Korea
*
*Corresponding author. E-mail: yhuh@rist.re.kr
Get access

Abstract

Focused ion beam (FIB) milling using high-energy gallium ions is widely used in the preparation of specimens for transmission electron microscopy (TEM). However, the energetic ion beam induces amorphization on the edge of specimens during milling, resulting in a mischievous influence on the clearness of high-quality transmission electron micrographs. In this work, the amorphization induced by the FIB milling was investigated by TEM for three kinds of materials, metallic materials in bulk shape, and semiconductive and electronic ceramic materials as a substrate for the deposition of thin films.

Keywords

focused ion beam (FIB)transmission electron microscopy (TEM)amorphizationmetallicsemiconductiveelectronic ceramic materials
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 33 - 37
Copyright
Copyright © Microscopy Society of America 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Baba, A., Bai, D., Sadoh, T., Kenjo, A., Nakashima, H., Mori, H. & Tsurushima, T. (1997). Behavior of radiation-induced defects and amorphization in silicon crystal. Nucl Instrum Methods Phys Res B 121, 299–301.10.1016/S0168-583X(96)00392-8Google Scholar
Cairney, J.M. & Munroe, P.R. (2003). Redeposition effects in transmission electron microscope specimens of FeAl-WC composites prepared using a focused ion beam miller. Micron 34, 97–107.10.1016/S0968-4328(03)00007-6Google Scholar
Kato, N.I. (2004). Reducing focused ion beam damage to transmission electron microscopy samples. J Electron Microsc 53, 451–458.10.1093/jmicro/dfh080Google Scholar
Li, J., Malis, T. & Dionne, S. (2006). Recent advances in FIB-TEM specimen preparation techniques. Mater Charact 57, 64–70.10.1016/j.matchar.2005.12.007Google Scholar
Prenitzer, B.I., Urbanik-Shannon, C.A., Giannuzzi, L.A., Brown, S.R., Irwin, R.B., Shofner, T.L. & Stevie, F.A. (2003). The correlation between ion beam/materials interactions and practical FIB specimen preparation. Microsc Microanal 9, 216–236.10.1017/S1431927603030034Google Scholar
Rubanov, S. & Munroe, P.R. (2005). Damage in III-V compounds during focused ion beam milling. Microsc Microanal 11, 446–455.10.1017/S1431927605050294Google Scholar
Sugimoto, Y., Taneya, M., Hidaka, H. & Akita, K. (1990). Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching. J Appl Phys 68, 2392–2399.10.1063/1.346497Google Scholar
Sugiyama, M. & Sigesato, G. (2004). A review of focused ion beam technology and its applications in transmission electron microscopy. J Electron Microsc 53, 527–536.Google Scholar
Wang, Z., Kato, T., Hirayama, T., Kato, N., Sasaki, K. & Saka, H. (2005). Surface damage induced by focused-ion-beam milling in a Si/Si p-n junction cross-sectional specimen. Appl Surf Sci 241, 80–86.10.1016/j.apsusc.2004.09.092Google Scholar
Yabuuchi, Y., Tametou, S., Okano, T., Inazato, S., Sadayama, S., Yamamoto, Y., Iwasaki, K. & Sugiyama, Y. (2004). A study of the damage on FIB-prepared TEM samples of AlxGa1−xAs. J Electron Microsc 53, 471–477.10.1093/jmicro/dfh062Google Scholar
Yu, J., Liu, J., Zhang, J. & Wu, J. (2006). TEM investigation of FIB induced damages in preparation of metal material TEM specimens by FIB. Mater Lett 60, 206–209.10.1016/j.matlet.2005.08.018Google Scholar