Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-27T04:55:23.808Z Has data issue: false hasContentIssue false

Comparison of Channeling Contrast between Ion and Electron Images

Published online by Cambridge University Press:  18 March 2013

L.A. Giannuzzi*
Affiliation:
L.A. Giannuzzi & Associates LLC, 12580 Walden Run Dr, Fort Myers, FL 33913, USA
J.R. Michael
Affiliation:
Sandia National Laboratories, Materials Characterization Department, P.O. Box 5800, MS 0886, Albuquerque, NM 87185-0886, USA
*
*Corresponding author. E-mail: Lucille@LAGiannuzzi.com
Get access

Abstract

Ion channeling contrast (iCC) and electron channeling contrast (eCC) are caused by variation in signal resulting from changes in the angle of the incident beam and the crystal lattice with respect to the target. iCC is directly influenced by the incident ion range in crystalline materials. The ion range is larger for low-index crystal orientated grains, resulting in the emission of fewer secondary electrons at the surface yielding a lower signal. Ions are stopped closer to the surface for off-axis grains, resulting in the emission of many secondary electrons yielding a higher signal. Conversely, backscattered electrons (BSEs) are the primary contribution to eCC. BSEs are diffracted or channeled to form an electron channeling pattern (ECP). The BSE emission of the ECP peaks when the electron beam is normal to the surface of an on-axis grain, and therefore a bright signal is observed. Thus, iCC and eCC images yield inverse contrast behavior for on-axis oriented grains. Since there is a critical angle associated with particle channeling, accurately determining grain boundary locations require the acquisition of multiple images obtained at different tilt conditions.

Type
Materials Applications: Short Communications
Copyright
Copyright © Microscopy Society of America 2013

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Giannuzzi, L.A. & Michael, J.R. (2012). Ion channeling vs. electron channeling image contrast. Microsc Microanal 18, 694695.Google Scholar
Joy, D.C., Newbury, D.E. & Davidson, D.L. (1982). Electron channeling patterns in the scanning electron microscope. J Appl Phys 53, R81R122.Google Scholar
Kempshall, B.K., Schwarz, S.M., Prenitzer, B.I., Giannuzzi, L.A., Irwin, R.B. & Stevie, F.A. (2001). Ion channeling effects on the focused ion beam milling of Cu. J Vacuum Sci Technol B 19, 749754.CrossRefGoogle Scholar
Lindhard, J. (1964). Motion of swift charged particles, as influenced by strings of atoms in crystals. Phys Lett 12, 126128.Google Scholar
Michael, J.R. (2011). Focused ion beam induced microstructural alterations: Texture development, grain growth, and intermetallic formation. Microsc Microanal 17, 386397.CrossRefGoogle ScholarPubMed
Newbury, D.E., Joy, D.C., Echlin, P., Fiori, C.E. & Goldstein, J.I. (1986). Advanced Scanning Electron Microscopy and X-Ray Microanalysis, pp. 87145. New York: Plenum Press.CrossRefGoogle Scholar
Onderdelinden, D. (1966). The influence of channeling on cu single-crystal sputtering. Appl Phys Lett 8, 189190.Google Scholar
Phaneuf, M.W. (1999). Applications of focused ion beam microscopy to materials science specimens. Micron 30, 277288.Google Scholar
Reimer, L. (1997). Transmission Electron Microscopy, Physics of Image Formation and Microanalysis, 4th ed., p. 293. Berlin: Springer.CrossRefGoogle Scholar
Reimer, L. (1998). Scanning Electron Microscopy, Physics of Image Formation and Microanalysis, 2nd ed., pp. 225–227 and 338–354. Berlin: Springer.CrossRefGoogle Scholar
Yahiro, Y., Kaneko, K., Fujita, T., Moon, W.-J. & Horita, Z. (2004). Crystallographic orientation contrast associated with Ga+ ion channelling for Fe and Cu in focused ion beam method. J Electron Microsc 53, 571576.Google Scholar