Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Molina, Sergio I.
2011.
Aberration-corrected scanning transmission electron microscopy of nanostructures for photovoltaics.
p.
003360.
Reyes, Daniel F
González, David
Ulloa, Jose M
Sales, David L
Dominguez, Lara
Mayoral, Alvaro
and
Hierro, Adrian
2012.
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots.
Nanoscale Research Letters,
Vol. 7,
Issue. 1,
Reyes, Daniel F.
González, David
Bastiman, Faebian
Dominguez, Lara
Hunter, Cristopher J.
Guerrero, Elisa
Roldan, Manuel A.
Mayoral, Alvaro
David, John P. R.
and
Sales, David L.
2013.
Photoluminescence Enhancement of InAs(Bi) Quantum Dots by Bi Clustering.
Applied Physics Express,
Vol. 6,
Issue. 4,
p.
042103.
Garcia, Alejandra
Raya, Andres M.
Mariscal, Marcelo M.
Esparza, Rodrigo
Herrera, Miriam
Molina, Sergio I.
Scavello, Giovanni
Galindo, Pedro L.
Jose-Yacaman, Miguel
and
Ponce, Arturo
2014.
Analysis of electron beam damage of exfoliated MoS2 sheets and quantitative HAADF-STEM imaging.
Ultramicroscopy,
Vol. 146,
Issue. ,
p.
33.
Ben, Teresa
Allah, Rabie Fath
Sales, David L.
González, David
and
Molina, Sergio I.
2014.
Transmission Electron Microscopy Characterization of Nanomaterials.
p.
657.
Hernández-Saz, J.
Herrera, M.
Molina, S.I.
Stanley, C.R.
and
Duguay, S.
2015.
3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs.
Scripta Materialia,
Vol. 103,
Issue. ,
p.
73.
Reyes, D F
Ulloa, J M
Guzman, A
Hierro, A
Sales, D L
Beanland, R
Sanchez, A M
and
González, D
2015.
Effect of annealing in the Sb and In distribution of type II GaAsSb-capped InAs quantum dots.
Semiconductor Science and Technology,
Vol. 30,
Issue. 11,
p.
114006.
Xu, Qian
Wu, Zhaochun
Hong, Jinhua
Chang, Xiaofeng
Li, Xueji
Yan, Shicheng
and
Wang, Peng
2015.
Structural and chemical characterization of novel NixZn1−xGa2O4 nanocatalysts at atomic resolution.
Applied Surface Science,
Vol. 353,
Issue. ,
p.
419.
Yin, Wenhao
Huang, Rong
Qi, Ruijuan
and
Duan, Chungang
2016.
Extraction of structural and chemical information from high angle annular dark-field image by an improved peaks finding method.
Microscopy Research and Technique,
Vol. 79,
Issue. 9,
p.
820.
Hernández-Saz, J.
Herrera, M.
Molina, S.I.
Stanley, C.R.
and
Duguay, S.
2016.
Atom probe tomography analysis of InAlGaAs capped InAs/GaAs stacked quantum dots with variable barrier layer thickness.
Acta Materialia,
Vol. 103,
Issue. ,
p.
651.
Baladés, N.
Sales, D. L.
Herrera, M.
Tan, C. H.
Liu, Y.
Richards, R. D.
and
Molina, S. I.
2018.
Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM.
Nanoscale Research Letters,
Vol. 13,
Issue. 1,
Khan, Atif A.
Herrera, M.
Pizarro, J.
Galindo, P. L.
Carrington, P. J.
Fujita, H.
Krier, A.
and
Molina, S. I.
2019.
Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures.
Journal of Materials Science,
Vol. 54,
Issue. 4,
p.
3230.
Khan, Atif A
Repiso, E
Herrera, M
Carrington, P J
de la Mata, M
Pizarro, J
Krier, A
and
Molina, S I
2020.
Effect of the cap layer growth temperature on the Sb distribution in InAs/InSb/InAs sub-monolayer heterostructures for mid-infrared devices.
Nanotechnology,
Vol. 31,
Issue. 10,
p.
105702.
Khan, Atif A
Herrera, M
Fernández-Delgado, N
Reyes, D F
Pizarro, J
Repiso, E
Krier, A
and
Molina, S I
2020.
Investigation on Sb distribution for InSb/InAs sub-monolayer heterostructure using TEM techniques.
Nanotechnology,
Vol. 31,
Issue. 2,
p.
025706.
Li, Q.
and
Zhang, Y.
2023.
Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM.
AIP Advances,
Vol. 13,
Issue. 1,