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Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

Published online by Cambridge University Press:  28 September 2007

Suk Chung ,
David J. Smith  and
Martha R. McCartney
Suk Chung
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA
David J. Smith
Affiliation:
School of Materials, Arizona State University, Tempe, AZ 85287, USA Department of Physics, Arizona State University, Tempe, AZ 85287, USA
Martha R. McCartney
Affiliation:
Department of Physics, Arizona State University, Tempe, AZ 85287, USA
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Abstract

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

Keywords

electron holographymean inner potentialinelastic mean-free-pathAlAsGaAs
Type
MATERIALS APPLICATIONS
Information
Microscopy and Microanalysis , Volume 13 , Issue 5 , October 2007 , pp. 329 - 335
Copyright
© 2007 Microscopy Society of America

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References

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