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Direct Transmission Electron Microscope Observations of Doping Variations in InP-Based Semiconductor Laser Diodes

Published online by Cambridge University Press:  02 July 2020

R. Hull
R. Hull*
Affiliation:
University of Virginia, Department of Materials Science, Charlottesville, VA22903-2442
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Extract

The ability to map semiconductor doping distributions with high spatial resolution (∽10 nm) and high compositional sensitivity (of order 1 ppm) is of enormous importance to the microelectronics and optoelectronics industry. Although several methods (e.g. scanning capacitance microscopy, masked secondary ion mass spectroscopy, secondary electron microscopy, electron holography) are under development, no technique currently offers the combination of sufficient resolution, sensitivity and reproducibility to fully address characterization requirements. In this paper, we describe development of a technique which utilizes focused ion beam (FIB) sputtering and transmission electron microscopy (TEM) to enable direct imaging of dopant distributions in InP-based semiconductor devices, with spatial resolution of order 10 - 30 ran, and compositional sensitivity of order 1017 cm-3 (i.e. 5 ppm).

Laser diode samples are prepared for TEM imaging using a FEI 200 30 kV Ga+ focused ion beam system. A schematic of the relevant structure is shown in Figure 1(a).

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 648 - 649
Copyright
Copyright © Microscopy Society of America

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References

(1) See other relevant papers by Lang, D.V., McCartney, M., and Venables, D. in these proceedings.Google Scholar

(2) Samples provided by AT&T Bell Laboratories (Now: Bell Laboratories, Lucent Technologies).Google Scholar

(3) Hull, R., Bahnck, D., Stevie, F.A., Koszi, L.A. and Chu, S.N.G.. Appl. Phys. Lett.,62, 3408 (1993)CrossRefGoogle Scholar

(4) Hull, R., Stevie, F.A. and Bahnck, D., Appl. Phys. Lett. 66, 341–3 (1995)CrossRefGoogle Scholar

(5) Moore, M.V., MSc Thesis, University of Virginia (1996)Google Scholar