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The Effect of Oxide Overlayers on Secondary Electron Dopant Mapping

Published online by Cambridge University Press:  22 May 2009

Maurizio Dapor ,
Mark A.E. Jepson ,
Beverley J. Inkson  and
Cornelia Rodenburg
Maurizio Dapor
Affiliation:
Fondazione Bruno Kessler, Centre for Materials and Microsystems, Via Sommarive, 18, Povo (Trento) I38050, Italy
Mark A.E. Jepson*
Affiliation:
Department of Engineering Materials, The University of Sheffield, Sheffield, South Yorkshire S1 3JD, United Kingdom
Beverley J. Inkson
Affiliation:
Department of Engineering Materials, The University of Sheffield, Sheffield, South Yorkshire S1 3JD, United Kingdom
Cornelia Rodenburg
Affiliation:
Department of Engineering Materials, The University of Sheffield, Sheffield, South Yorkshire S1 3JD, United Kingdom
*
Corresponding author. E-mail: m.jepson@sheffield.ac.uk
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Abstract

The International Technology Roadmap for Semiconductors ranks dopant profiling as one of the most difficult challenges for analysis of semiconductors. Dopant mapping in the scanning electron microscope (SEM) has the potential to provide a solution. This technique has not yet found widespread application, however, mainly due to the lack of a comprehensive theoretical model, uncertain quantification, and its inability to differentiate doping levels in n-type silicon. Although a Monte Carlo model was recently published that closely matched experimental data obtained in p-doped silicon to data obtained from the theoretical model, a large discrepancy between experimental data obtained for n-type silicon was found. Here we present a Monte Carlo model that provides close matches between experimental and calculated data in both n- and p-type silicon, paving the way for a widespread application of SEM dopant contrast.

Keywords

Monte Carlo modelingdopant profilingsemiconductorssiliconelectron microscopy
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 15 , Issue 3 , June 2009 , pp. 237 - 243
Copyright
Copyright © Microscopy Society of America 2009

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