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Electron Holography of Semiconductor Junctions

Published online by Cambridge University Press:  02 July 2020

M. R. McCartney  and
Jing Li
M. R. McCartney
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ, 85287
Jing Li
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287
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Extract

TEM has not traditionally contributed to characterization of semiconductor junctions, except for some intriguing results by Perovic, Hull and Alvis where highly doped layers gave contrast under very specific sample preparation and imaging conditions. Since electron holography is sensitive to the phase of the electron wavefront that has passed through the sample, it has the potential to provide voltage contrast. In principle, given its inherent two-dimensional and quantitative character, electron holography is a strong candidate for analysis of semiconductor device junctions.

The sample for the work reported here was one of a group of test specimens fabricated at IBM for a dopant metrology round-robin comparison to evaluate various profiling methods. The substrate was <100> p-type silicon, boron-doped at 11-25 Ω-cm-1. The test structure was fabricated using low- temperature epitaxial growth and consisted of an abrupt p-n junction, formed by abutting 1020cm-3 doped regions of boron and phosphorus

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 642 - 643
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Hull, R., Stevie, F. A. and Bahnck, D., Appl. Phys. Lett., 66 (3), (1995) 341.CrossRefGoogle Scholar
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