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Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires

Published online by Cambridge University Press:  08 September 2011

Martin Ek ,
Magnus T. Borgström ,
Lisa S. Karlsson ,
Crispin J.D. Hetherington  and
L. Reine Wallenberg
Martin Ek*
Affiliation:
nCHREM/Polymer & Materials Chemistry, Lund University, Box 124, S-221 00 Lund, Sweden
Magnus T. Borgström
Affiliation:
Solid State Physics, Lund University, Box 118, S-221 00, Lund, Sweden
Lisa S. Karlsson
Affiliation:
Department of Materials, University of Oxford, Parks Rd., Oxford OX1 3PH, UK
Crispin J.D. Hetherington
Affiliation:
Department of Materials, University of Oxford, Parks Rd., Oxford OX1 3PH, UK
L. Reine Wallenberg
Affiliation:
nCHREM/Polymer & Materials Chemistry, Lund University, Box 124, S-221 00 Lund, Sweden
*
Corresponding author. E-mail: martin.ek@polymat.lth.se
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Abstract

The twin interface structure in twinning superlattice InP nanowires with zincblende structure has been investigated using electron exit wavefunction restoration from focal series images recorded on an aberration-corrected transmission electron microscope. By comparing the exit wavefunction phase with simulations from model structures, it was possible to determine the twin structure to be the ortho type with preserved In-P bonding order across the interface. The bending of the thin nanowires away from the intended ⟨110⟩ axis could be estimated locally from the calculated diffraction pattern, and this parameter was successfully taken into account in the simulations.

Keywords

transmission electron microscopyexit-wave reconstructionaberration correctionnanowirestwinningindium phosphide
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 17 , Issue 5 , October 2011 , pp. 752 - 758
Copyright
Copyright © Microscopy Society of America 2011

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References

REFERENCES

Algra, R.E., Verheijen, M.A., Borgström, M.T., Feiner, L.-F., Immink, G., Van Enckevort, W.J.P., Vlieg, E. & Bakkers, E.P.A.M. (2008). Twinning superlattices in indium phosphide nanowires. Nature 456, 369–372.CrossRefGoogle ScholarPubMed
Bakkers, E.P.A.M., Borgström, M.T. & Verheijen, M.A. (2007). Epitaxial growth of III-V nanowires on group IV substrates. MRS Bull 32, 117–122.Google Scholar
Bao, J., Bell, D.C., Capasso, F., Wagner, J.B., Mårtensson, T., Trägårdh, J. & Samuelson, L. (2008). Optical properties of rotationally twinned InP nanowire heterostructures. Nano Lett 8, 836–841.CrossRefGoogle ScholarPubMed
Borgström, M.T., Norberg, E., Wickert, P., Nilsson, H.A., Trägårdh, J., Dick, K.A., Statkute, G., Deppert, K., Ramvall, P. & Samuelson, L. (2008). Precursor evaluation for in situ InP nanowire doping. Nanotechnology 19, 445602.Google Scholar
Caroff, P., Dick, K.A., Johansson, J., Deppert, K., Messing, M.E. & Samuelson, L. (2009). Controlled polytypic and twin-plane superlattices in III-V nanowires. Nat Nanotechnol 4, 50–55.CrossRefGoogle ScholarPubMed
Cimpoiasu, E., Stern, E., Klie, R., Munden, R.A., Cheng, G. & Reed, M.A. (2006). The effect of Mg doping on GaN nanowires. Nanotechnology 17, 5735–5739.Google Scholar
Dubrovskii, V.G. & Sibirev, N.V. (2008). Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires. Phys Rev B 77, 035414.CrossRefGoogle Scholar
Gutsche, C., Regolin, I., Blekker, K., Lysov, A., Prost, W. & Tegude, F.J. (2009). Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth. J Appl Phys 105, 024305.Google Scholar
Haraguchi, K., Katsuyama, T., Hiruma, K. & Ogawa, K. (1992). GaAs p-n junction formed in quantum wire crystals. Appl Phys Lett 60, 745–747.CrossRefGoogle Scholar
Hetherington, C.J.D. (1990). HREM of defects in silicon at twin intersections. Mat Res Soc Symp Proc 183, 123–134.CrossRefGoogle Scholar
Hutchison, J.L., Titchmarsh, J.M., Cockayne, D.J.H., Doole, R.C., Hetherington, C.J.D., Kirkland, A.I. & Sawada, H. (2005). A versatile double aberration-corrected, energy filtered HREM/STEM for materials science. Ultramicroscopy 103, 7–15.Google Scholar
Jia, C.-L., Lentzen, M. & Urban, K.W. (2004). High-resolution transmission electron microscopy using negative spherical aberration. Microsc Microanal 10, 174–184.CrossRefGoogle ScholarPubMed
Magnusson, M.H., Deppert, K., Malm, J.-O., Bovin, J.-O. & Samuelson, L. (1999). Size-selected gold nanoparticles by aerosol technology. NanoStruct Mater 12, 45–48.Google Scholar
Mattila, M., Hakkarainen, T., Mulot, M. & Lipsanen, H. (2006). Crystal-structure-dependent photoluminescence from InP nanowires. Nanotechnology 17, 1580–1583.CrossRefGoogle ScholarPubMed
Meyer, R.R., Kirkland, A.I., Dunin-Borkowski, R.E. & Hutchison, J.L. (2000). Experimental characterisation of CCD cameras for HREM at 300 kV. Ultramicroscopy 85, 9–13.CrossRefGoogle Scholar
Meyer, R.R., Kirkland, A.I. & Saxton, W.O. (2002). A new method for the determination of the wave aberration function for high resolution TEM 1. Measurement of the symmetric aberrations. Ultramicroscopy 92, 89–109.CrossRefGoogle ScholarPubMed
Mikkelsen, A., Ouattara, L., Andersen, J.N., Samuelson, L., Seifert, W. & Lundgren, E. (2004). Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy. Nat Mater 3, 519–523.CrossRefGoogle ScholarPubMed
Mishra, A., Titova, L.V., Hoang, T.B., Jackson, H.E., Smith, L.M., Yarrison-Rice, J.M., Kim, Y., Joyce, H.J., Gao, Q., Tan, H.H. & Jagadish, C. (2007). Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires. Appl Phys Lett 91, 263104.CrossRefGoogle Scholar
Paiman, S., Gao, Q., Tan, H.H., Jagadish, C., Pemasiri, K., Montazeri, M., Jackson, H.E., Smith, L.M., Yarrison-Rice, J.M., Zhang, X. & Zou, J. (2009). The effect of V/III ratio and catalyst particle size on the crystal structure and optical properties of InP nanowires. Nanotechnology 20, 225606.Google Scholar
Pauzauskie, P. & Yang, P. (2006). Nanowire photonics. Mater Today 9, 36–45.Google Scholar
Pemasiri, K., Montazeri, M., Gass, R., Smith, L.M., Jackson, H.E., Yarrison-Rice, J.M., Paiman, S., Gao, Q., Tan, H.H., Jagadish, C., Zhang, X. & Zou, J. (2009). Carrier dynamics and quantum confinement in type II ZB-WZ InP nanowire homostructures 2009. Nano Lett 9, 648–654.Google Scholar
Perea, D.E., Allen, J.E., May, J.S., Wessels, B.W., Seidman, D.N. & Lauhon, L.J. (2006). Three-dimensional nanoscale composition mapping of semiconductor nanowires. Nano Lett 6, 181–185.CrossRefGoogle ScholarPubMed
Perea, D.E., Hemesath, E.R., Schwalbach, E.J., Lensch-Falk, J.L., Voorhees, P.W. & Lauhon, L.J. (2009). Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire. Nat Nanotechnol 4, 315–319.Google Scholar
Stadelmann, P. (2008). Jems electron microscopy software, Java version 3.3425U2008.Google Scholar
Thelander, C., Agarwal, P., Brongersma, S., Eymery, J., Feiner, L.-F., Forchel, A., Scheffler, M., Riess, W., Ohlsson, B.J. & Gosele, U. (2006). Nanowire-based one-dimensional electronics. Mater Today 9, 28–35.Google Scholar
Tillmann, K., Urban, K.W. & Thust, A. (2004). Spherical aberration correction in tandem with exit-plane wave function reconstruction: Interlocking tools for the atomic scale imaging of lattice defects in GaAs. Microsc Microanal 10, 185–198.Google Scholar
Uhlemann, S. & Haider, M. (1998). Residual wave aberrations in the first spherical aberration corrected transmission electron microscope. Ultramicroscopy 72, 109–119.CrossRefGoogle Scholar
van Weert, M.H.M., Wunnicke, O., Roest, A.L., Eijkemans, T.J., Yu Silov, A., Haverkort, J.E.M., 't Hooft, G.W. & Bakkers, E.P.A.M. (2006). Large redshift in photoluminescence of p-doped InP nanowires induced by Fermi-level pinning. Appl Phys Lett 88, 043109.CrossRefGoogle Scholar
Xu, X., Beckman, S.P., Specht, P., Weber, E.R., Chrzan, D.C., Erni, R.P., Arslan, I., Browning, N., Bleloch, A. & Kisielowski, C. (2005). Distortion and segregation in a dislocation core region at atomic resolution. Phys Rev Lett 95, 145501.CrossRefGoogle Scholar
Yamashita, T., Sano, K., Akiyama, T., Nakamura, K. & Ito, T. (2008). Theoretical investigations on the formation of wurtzite segments in group III–V semiconductor nanowires. Appl Surf Sci 254, 7668–7671.Google Scholar
Zemlin, F., Weiss, K., Schiske, P. & Kunath, W. (1978). Coma-free alignment of high resolution electron microscopes with the aid of optical diffractograms. Ultramicroscopy 3, 49–60.Google Scholar