Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-29T05:48:19.718Z Has data issue: false hasContentIssue false
  • English
  • Français

Estimation of Ge nanocrystals size by Raman, X-rays, and HRTEM techniques

Published online by Cambridge University Press:  03 October 2008

S.R.C. Pinto ,
P. Caldelas ,
A.G. Rolo ,
A. Chahboun  and
M.J.M. Gomes
S.R.C. Pinto
Affiliation:
Physics Department, University of Minho, 4710 – 057 Braga, Portugal
P. Caldelas
Affiliation:
Physics Department, University of Minho, 4710 – 057 Braga, Portugal
A.G. Rolo
Affiliation:
Physics Department, University of Minho, 4710 – 057 Braga, Portugal
A. Chahboun
Affiliation:
Physics Department, University of Minho, 4710 – 057 Braga, Portugal Physics Department, Dhar Mehraz Sciences Faculty, BP 1796, Fès, Morocco
M.J.M. Gomes
Affiliation:
Physics Department, University of Minho, 4710 – 057 Braga, Portugal

Abstract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Ge NCs have attracted considerable attention because of their potential applications in nonvolatile memory and integrated optoelectronics. A number of groups have already proposed integrate flash memories based on Ge NCs embedded SiO2 matrix. Since Al2O3 presents a high dielectric constant comparatively to SiO2, it is a good candidate to replace silica in flash memory systems, and therefore improve their performances. Moreover, Al2O3 presents good mechanical properties, and supports high temperature, which leads it to be an ideal material for Si processing conditions. However, a few studies have been reported on Ge NCs embedded in Al2O3 matrix.

Type
Abstract
Information
Microscopy and Microanalysis , Volume 14 , Supplement S3 , September 2008 , pp. 61 - 64
Copyright
Copyright © Microscopy Society of America 2008