Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-14T06:36:14.869Z Has data issue: false hasContentIssue false

High-Resolution Electron Backscatter Diffraction in III-Nitride Semiconductors

Published online by Cambridge University Press:  23 September 2015

Arantxa Vilalta-Clemente
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.
G. Naresh-Kumar
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
M. Nouf-Allehiani
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
Peter J. Parbrook
Affiliation:
Tyndall National Institute, University College Cork, "Lee Maltings", Cork, Ireland.
Emmanuel D.Le Boulbar
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Duncan Allsopp
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Philip A. Shields
Affiliation:
Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom.
Carol Trager-Cowan
Affiliation:
Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
Angus J. Wilkinson
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Wilkinson, A J & Britton, T. B., Materials Today 15 (2012). p. 366.Google Scholar
[2] Wilkinson, A J, et al, Ultramicroscopy 106 (2006). p. 307.CrossRefGoogle Scholar
[3] Naresh-Kumar, G, et al, Phys. Rev. Lett. 108 (2012). p. 135503.Google Scholar
[4] The authors acknowledge funding from EPSRC grant No: EP/J015792/1 & EP/J016098/1.Google Scholar