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Highresolution X-Ray Spectroscopy at Room Temperature
Published online by Cambridge University Press: 02 July 2020
Extract
Silicon drift detectors (SDD) have shown an excellent energy resolution close to room temperature. All signal charges, generated in the fully depleted volume by ionizing radiation are guided to a small electron collecting read-out node. The first amplification is realized with an integrated on-chip JFET. The total read-out capacitance can be kept below 250 fF, independent of the detector area. The fact, that the first amplifier is already integrated in the detector offers many operational advantages: (a) better resolution because of the reduction of read-node capacitance, (b) insensitivity with respect to acoustic noise and electrical pick-up, (c) compact detector packaging and (d) the absence of liquid nitrogen cooling. Fig. 1 shows the detector concept, including the integrated electronics. The X-rays are hitting the SDD from the homogeneous radiation entrance window on the backside of the device.
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- 30 Years of Energy Dispersive Spectrometry in Microanalysis
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- Copyright © Microscopy Society of America
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