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Holography Measurement of Mean Inner Potential of Germanium

Published online by Cambridge University Press:  02 July 2020

Jing Li ,
M.R. McCartney ,
R.E. Dunin-Borkowski  and
David J. Smith
Jing Li
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287
M.R. McCartney
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287
R.E. Dunin-Borkowski
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287
David J. Smith
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ85287
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Extract

There is increasing interest in the quantitative characterization of nanometer-scale semiconductor alloy layers, such as those of SiGe or AlGaAs. Electron holography, which has the ability to detect small changes in mean inner potential Vo, can in principle provide information about local changes in composition. However, the measurement of absolute values of Vo is not always straightforward and values for only a few materials are known with confidence. In this study, we measure Vo for Ge using electron holography, and we compare our experimental data with calculations. The holographic approach that we use to measure Vo is described in the paper of Gajdardziska-Josifovska et al. The Ge samples were nominally 90° cleaved wedges from a <100> wafer. Holograms were recorded on a Philips CM200 FEG equipped with a Gatan 794 CCD camera, and data were obtained for several crystal tilts (determined from diffraction patterns) to assess dynamical contributions to the phases.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 612 - 613
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Gajdardziska-Josifovska, M., et al., Ultramicroscopy 50 (1993) 285.CrossRefGoogle Scholar
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