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Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods

Published online by Cambridge University Press:  23 September 2015

J. D. Gallagher ,
T. Aoki ,
P. Sims ,
J. Menendez  and
J. Kouvetakis
J. D. Gallagher
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe, AZ 85287USA
T. Aoki
Affiliation:
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287USA
P. Sims
Affiliation:
Department of Chemistry & Biochemistry, Arizona State University, Tempe, AZ 85287USA
J. Menendez
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe, AZ 85287USA
J. Kouvetakis
Affiliation:
Department of Chemistry & Biochemistry, Arizona State University, Tempe, AZ 85287USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 2137 - 2138
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Gallagher, J. D., et. al, Applied Physics Letters 105 (2014). p. 142102.Google Scholar
[2] Tseng, H. H., et. al, Applied Physics Letters 102 (2013). p. 182106.Google Scholar
[3] Wei, Du, et. al, Applied Physics Letters 104 (2014). p. 241110.Google Scholar
[4] This work was supported by the NSF. We acknowledge the use of facilities at the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.Google Scholar