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Innovative Grounding Methodology for Epoxy Impregnated Semiconductor Cross Sections for Electron Microscopy Inspection

Published online by Cambridge University Press:  30 July 2020

Frieder Baumann ,
Pradip Sairam Pichumani  and
Christopher Torcedo
Frieder Baumann
Affiliation:
Globalfoundries, Inc., Malta, New York, United States
Pradip Sairam Pichumani
Affiliation:
Globalfoundries, Inc., Malta, New York, United States
Christopher Torcedo
Affiliation:
Globalfoundries, Inc., Malta, New York, United States

Abstract

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Type
Advances in Electron Microscopy to Characterize Materials Embedded in Devices
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 370 - 372
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Copyright
Copyright © Microscopy Society of America 2020

References

Khatkhatay, F. et al. A Simple Method to Decouple Redeposition-Related Artifacts from Real Defects in the Failure Analysis of Silicon Photonics Modules. M&M 2019, 726–727.Google Scholar
Frank, L., et al. Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System. Scanning. 23. 36–50. 10.1002/sca.4950230106.10.1002/sca.4950230106CrossRefGoogle Scholar
The authors would like to thank Jeremy Brundige for the mechanical cross section and imagingGoogle Scholar