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Joining of TiAl alloys using Ni/Al multilayers

Published online by Cambridge University Press:  21 August 2009

S. Simões ,
F. Viana ,
V. Ventzke ,
M. Koçak ,
A. S. Ramos ,
M. T. Vieira  and
M. F. Vieira
S. Simões
Affiliation:
CEMUC, Dep. de Engenharia Metalúrgica e Materiais, Faculdade de Engenharia, Universidade do Porto, Rua Dr. Roberto Frias, 4200-465 Porto, Portugal
F. Viana
Affiliation:
CEMUC, Dep. de Engenharia Metalúrgica e Materiais, Faculdade de Engenharia, Universidade do Porto, Rua Dr. Roberto Frias, 4200-465 Porto, Portugal
V. Ventzke
Affiliation:
GKSS Research Center, Institute of Materials Research, Max-Planck Str., Geesthacht, Germany
M. Koçak
Affiliation:
GKSS Research Center, Institute of Materials Research, Max-Planck Str., Geesthacht, Germany
A. S. Ramos
Affiliation:
CEMUC, Departamento Engenharia Mecãnica, Faculdade de Ciências e Tecnologia da
M. T. Vieira
Affiliation:
CEMUC, Departamento Engenharia Mecãnica, Faculdade de Ciências e Tecnologia da
M. F. Vieira
Affiliation:
CEMUC, Dep. de Engenharia Metalúrgica e Materiais, Faculdade de Engenharia, Universidade do Porto, Rua Dr. Roberto Frias, 4200-465 Porto, Portugal

Abstract

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The development of joining processes for TiAl alloys is fundamental to integrate them into functional structures and to widen their application field. Diffusion bonding has become the most reported technique for joining TiAl alloys but have the disadvantage of requiring high temperature stages. Diffusion bonding of TiAl at the 950-1200°C temperature range has been reported to produce defect-free bonds. Çam et al., successfully joined TiAl at 950 °C/30 MPa/3 h and 1000 °C/30 MPa/1 h, however, the bond interfaces were clearly visible.

Type
Materials Sciences
Information
Microscopy and Microanalysis , Volume 15 , Supplement S3 , July 2009 , pp. 73 - 74
Copyright
Copyright © Microscopy Society of America 2009