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Microscale Elemental Imaging of Semiconductor Materials Using Focused Ion Beam Sims
Published online by Cambridge University Press: 02 July 2020
Extract
The semiconductor industry demands elemental information from ever smaller regions. Two types of information in demand are two dimensional dopant profiles for the MOS transisitor and identification of particles as small as 30 nm diameter. The work of Levi-Setti and others resulted in liquid metal ion source (LMIS) instruments that provided secondary ion mass spectrometry (SIMS) images using Ga+ beams with 20 nm lateral resolution. It is now possible to purchase focused ion beam (FIB) systems with 5 nm beam capability and SIMS detection.
The application of LMIS SIMS to meet semiconductor demands has been pursued in our laboratory with a FEI-800 FIB. SIMS imaging of semiconductor patterns after etch has shown the ability to identify boron and carbon contamination. Figure 1 shows boron in a comb structure after a BC13 etch. The boron can be shown to be removed by a cleaning step.
- Type
- Microscopy of Semiconducting and Superconducting Materials
- Information
- Copyright
- Copyright © Microscopy Society of America
References
1. Levi-Setti, R., et al., Secondary Ion Mass Spectrometry, SIMS V, A. Benninghoven et al.,eds., Springer-Verlag, Berlin (1986)132.CrossRefGoogle Scholar
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