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Microscopy of Metal Oxide Surfaces

Published online by Cambridge University Press:  07 August 2002

Martin R. Castell ,
Sergei L. Dudarev ,
Christiane Muggelberg ,
Adrian P. Sutton ,
G. Andrew D. Briggs  and
David T. Goddard
Martin R. Castell*
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Sergei L. Dudarev
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Christiane Muggelberg
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Adrian P. Sutton
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
G. Andrew D. Briggs
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
David T. Goddard
Affiliation:
Research and Development, British Nuclear Fuels plc, Springfields Works, Salwick, Preston PR4 0XJ, UK
*
*Corresponding author
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Abstract

Elevated temperature scanning tunneling microscopy is used to study oxides that are room temperature insulators but become sufficiently electrically conducting at higher temperatures to allow imaging to be performed. Atomic resolution images of NiO, CoO, and UO2 have been obtained in this fashion which allow surface structure and defect determination. To complement the experiments, modeling of the electronic surface structure reveals which atomic sites give rise to the contrast observed in the images. Low voltage scanning electron microscopy is used to image small equilibrium pores in UO2 single crystals to evaluate the surface energy ratio of the (111) to (001) surfaces.

Keywords

scanning tunneling microscopyscanning electron microscopyoxidessurfacesdefectselectronic structure modelling
Type
Research Article
Information
Microscopy and Microanalysis , Volume 6 , Issue 4 , July 2000 , pp. 324 - 328
Copyright
Copyright © Microscopy Society of America 2000

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