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Microstructural Characterization of Heteroepitaxial SiGeC Alloys

Published online by Cambridge University Press:  02 July 2020

David J. Smith ,
D. Chandrasekhar ,
T. Laursen ,
J.W. Mayer ,
J. Huffman ,
McD. Robinson ,
E.T. Croke  and
A.T. Hunter
David J. Smith
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
D. Chandrasekhar
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
T. Laursen
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
J.W. Mayer
Affiliation:
Center for Solid State Science, Arizona State University, Tempe, AZ85287-1704
J. Huffman
Affiliation:
Lawrence Semiconductor Research Laboratory, 2300 W. Huntington, Tempe, AZ85282.
McD. Robinson
Affiliation:
Lawrence Semiconductor Research Laboratory, 2300 W. Huntington, Tempe, AZ85282.
E.T. Croke
Affiliation:
HRL Laboratories, LLC, 3011 Malibu Canyon Rd., Malibu, CA90265.
A.T. Hunter
Affiliation:
HRL Laboratories, LLC, 3011 Malibu Canyon Rd., Malibu, CA90265.
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Extract

Heteroepitaxial growth of Group IV elements on Si is attracting increased attention because of the possibility of strain compensation in addition to bandgap engineering. The incorporation of the smaller C atom into Si1-xGex binary alloys to compensate for the larger size of the Ge atom offers the prospect of lattice matching and hence strain-free growth. In our early work, ternary SiGeC alloy films with up to ∽ 2% C were epitaxial with excellent crystallinity and very few interfacial defects. However, with increased C content, the films developed considerable disorder away from the substrate and finally became amorphous. Moreover, even at low C contents (∽2-3%), it appears that substantial C is being incorporated interstitially rather than substitutionally into the covalent lattice.2 Our recent work has therefore been aimed at establishing growth conditions that enable the amount of substitutional C to be maximized while still maintaining high crystal quality.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 658 - 659
Copyright
Copyright © Microscopy Society of America

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References

References:

1.Atzmon, Z., Bair, A.E., Jaquez, E.J. et al, Appl. Phys. Lett. 65 (1994) 2559.CrossRefGoogle Scholar
2.Hearne, S., Herbots, N., Xiang, J. et al, Nucl. Instrum. Methods, B118 (1996) 88.CrossRefGoogle Scholar
3.Laursen, T., Chandrasekhar, D., Smith, D.J. et al, Appl. Phys. Lett. 71 (1997) 1634.CrossRefGoogle Scholar
4.Croke, E.T., Hunter, A.T., Ahn, C.C. et al, J.|Cryst. Growth 175/176 (1997) 486.CrossRefGoogle Scholar
5. Financial support for this work was provided by the Defence Advanced Research Projects Agency monitored by Lt. Col. G. Pomrenke under Contract MDA972-95-3-0047.Google Scholar