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Microstructural Characterization of Thick PZT films on Cu Foils Deposited by Electrophoresis

Published online by Cambridge University Press:  03 October 2008

Aiying Wu*
Affiliation:
Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro, Portugal
P.M. Vilarinho
Affiliation:
Department of Ceramics and Glass Engineering, CICECO, University of Aveiro, Aveiro, Portugal
A.I. Kingon
Affiliation:
Department of Materials Science and Engineering, Materials Research Center, North Carolina State University, Raleigh, USA
I. Reaney
Affiliation:
Department of Engineering Materials, University of Sheffield, Sheffield S1 3JD, UK
*
Corresponding author. E-mail: aiying@ua.pt

Abstract

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Piezoelectric and electrostrictive responses in poled and unpoled ferroelectric and relaxor ferroelectric compositions are of importance in transducers for converting electrical to mechanical impulses and vice-versa. Sensor applications make use of the very high piezoelectric constant dijk of the converse effect, which also permit efficient conversion of electrical to mechanical response. One of the most important families of materials for piezoelectric applications is Pb(Zr,Ti)O3(PZT). The most widely studied composition of PZT lies at the boundary between the tetragonal and rhombohedral phases, known as the morphotropic phase boundary (MPB) and exhibits greatly enhanced dielectric and piezoelectric properties in bulk and thin film. In modern electronic applications, pyroelectric detectors, piezoelectric microsensors, and micromechanical pumps require the integration of PZT films into a variety of device structures. To get sufficiently large piezoelectric strains for optimization of the performance and reliability of the device, thick films in the thickness range of 5–50 μm are desired. On the other hand burying the device components within the substrate is of utmost importance for miniaturization. In comparison to traditional surface mounted components embedded ones will free surface space for a higher functionality of the device, reduce solder points and increase device reliability. Additionally, to reduce the device costs the use of flexible copper foil as substrates is of particular interest. Its high conductivity and compatibility with printed circuit boards makes copper an attractive candidate substrate for embedded application. However, depositing PZT thick films on copper is not trivial, due to the conflict between the high temperature required to sinter PZT (∼1150°C) and low melting temperature of Cu (∼1050°C), in addition to the easy oxidation of Cu. As a consequence the preparation of PZT thick films on Cu involves a complex route to decrease the ceramic sintering temperature and to control the oxygen partial pressure. So far, no successful deposition of PZT thick films on copper foils was reported.

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Copyright
Copyright © Microscopy Society of America 2008