Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-29T07:27:01.950Z Has data issue: false hasContentIssue false

Morphology Dependence on Fluorine Doped Tin Oxide Film ThicknessStudied with Atomic Force Microscopy

Published online by Cambridge University Press:  30 December 2005

A. G. Macedo
Affiliation:
Universidade Federal do Parana, Brazil
C. E. Cava
Affiliation:
Universidade Federal do Parana, Brazil
C. D. Canestraro
Affiliation:
Universidade Federal do Parana, Brazil
L. Contini
Affiliation:
Universidade Federal do Parana, Brazil
L. S. Roman
Affiliation:
Universidade Federal do Parana, Brazil
Get access

Extract

Tin oxide (TO) or fluorine doped tin oxide (FTO) has been frequently used as a transparent electrode in our organic opto-electronic devices [1-3]. In general, these devices are fabricated in a sandwich structure where an organic thin layer (approx. 100nm thick) stays between two conducting electrodes, TO or FTO and Al. Due to higher conductivity FTO is normally our choice. The morphology of the electrodes influences the morphology of the organic layer, mainly when the deposition of the organic layer is done electrochemically.

Type
Other
Copyright
© 2005 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)