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Multiple Double Cross-Section Transmission Electron Microscope Sample Preparation of Specific Sub-10 nm Diameter Si Nanowire Devices

Published online by Cambridge University Press:  10 November 2011

Lynne M. Gignac ,
Surbhi Mittal ,
Sarunya Bangsaruntip ,
Guy M. Cohen  and
Jeffrey W. Sleight
Lynne M. Gignac*
Affiliation:
IBM Thomas J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
Surbhi Mittal
Affiliation:
IBM Thomas J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
Sarunya Bangsaruntip
Affiliation:
IBM Thomas J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
Guy M. Cohen
Affiliation:
IBM Thomas J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
Jeffrey W. Sleight
Affiliation:
IBM Thomas J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, NY 10598, USA
*
Corresponding author. E-mail: gignac@us.ibm.com
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Abstract

The ability to prepare multiple cross-section transmission electron microscope (XTEM) samples from one XTEM sample of specific sub-10 nm features was demonstrated. Sub-10 nm diameter Si nanowire (NW) devices were initially cross-sectioned using a dual-beam focused ion beam system in a direction running parallel to the device channel. From this XTEM sample, both low- and high-resolution transmission electron microscope (TEM) images were obtained from six separate, specific site Si NW devices. The XTEM sample was then re-sectioned in four separate locations in a direction perpendicular to the device channel: 90° from the original XTEM sample direction. Three of the four XTEM samples were successfully sectioned in the gate region of the device. From these three samples, low- and high-resolution TEM images of the Si NW were taken and measurements of the NW diameters were obtained. This technique demonstrated the ability to obtain high-resolution TEM images in directions 90° from one another of multiple, specific sub-10 nm features that were spaced 1.1 μm apart.

Keywords

focused ion beamtransmission electron microscopesample preparationdouble cross sectionsiliconnanowiresemiconductorgate-all-aroundMOSFETfield effect transistor
Type
Software and Techniques Development
Information
Microscopy and Microanalysis , Volume 17 , Issue 6 , December 2011 , pp. 889 - 895
Copyright
Copyright © Microscopy Society of America 2011

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References

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Supplementary material: PDF

Gignac Supplementary Figure 1

Supplementary Figure 1. Optical image of the inside of the Helios 400s DB-FIB chamber with both bulk and flip stages labeled.

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