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Near-Field Scanning Optical Microscopy Studies of Individual Dislocations in Relaxed GeSi Films

Published online by Cambridge University Press:  02 July 2020

Julia W. P. Hsu ,
M. H. Gray  and
Q. Xu
Julia W. P. Hsu
Affiliation:
Department of Physics, University of Virginia, Charlottesville, VA22901USA
M. H. Gray
Affiliation:
Department of Physics, University of Virginia, Charlottesville, VA22901USA
Q. Xu
Affiliation:
Department of Physics, University of Virginia, Charlottesville, VA22901USA
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Extract

Due to the submicron size of crystallographic defects, characterization of dislocations has been done. mostly by electron microscopy techniques. Transmission electron microscopy has generated invaluable structural information at the atomic scale. However, the influence of these electrically active defects on carrier transport can only be learned from lower resolution (∼ 1 μm) techniques such as electron beam induced current (EBIC) and photocurrent measurements. Near-field scanning optical microscopy (NSOM) is a novel optical technique that circumvents the diffraction limit. In this talk, we will present the application of NSOM to perform near-field photocurrent (NPC) measurements on strain-relaxed GeSi films on Si substrates to study the electrical activity of individual threading dislocations. Photoexcited carriers are generated locally by NSOM light and are collected by the builtin p-n junctions in the sample resulting in an external photocurrent. As the tip moves across the sample, topographic and NPC images were acquired simultaneously.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 610 - 611
Copyright
Copyright © Microscopy Society of America

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References

References:

1Hsu, J. W. P., et. al. Appl. Phys. Lett. 65(1994)344; J. Appl. Phys. 79(1996)7743.CrossRefGoogle Scholar
2Xu, Q., Gray, M. H., and Hsu, J. W. P.. J. Appl. Phys. 82(1997)748.CrossRefGoogle Scholar
3Higgs, V. and Kittler, M., Appl. Phys. Lett. 65(1994)2804.CrossRefGoogle Scholar
4 This work is supported by funding from NSF, Jeffress Trust, and the Sloan Foundation.Google Scholar