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Nitrogen Gas Field Ion Source (GFIS) Focused Ion Beam (FIB) Secondary Electron Imaging: A First Look

Published online by Cambridge University Press:  10 May 2017

Marek E. Schmidt Open the ORCID record for Marek E. Schmidt [Opens in a new window] ,
Anto Yasaka ,
Masashi Akabori  and
Hiroshi Mizuta
Marek E. Schmidt*
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, 923-1292, Japan
Anto Yasaka
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, 923-1292, Japan Hitachi High-Tech Science Corp., 36-1 Takenoshita, Oyama-cho, 410-1393, Japan
Masashi Akabori
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, 923-1292, Japan
Hiroshi Mizuta
Affiliation:
School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, 923-1292, Japan Nano Research Group, University of Southampton, Highfield, Southampton, SO17 1BJ, UK Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 UKM, Bangi Selangor, Malaysia
*
*Corresponding author. schmidtm@jaist.ac.jp
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Abstract

The recent technological advance of the gas field ion source (GFIS) and its successful integration into systems has renewed the interest in the focused ion beam (FIB) technology. Due to the atomically small source size and the use of light ions, the limitations of the liquid metal ion source are solved as device dimensions are pushed further towards the single-digit nanometer size. Helium and neon ions are the most widely used, but a large portfolio of available ion species is desirable, to allow a wide range of applications. Among argon and hydrogen, $${\rm N}_{2}^{{\plus}} $$ ions offer unique characteristics due to their covalent bond and their use as dopant for various carbon-based materials including diamond. Here, we provide a first look at the $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB enabled imaging of a large selection of microscopic structures, including gold on carbon test specimen, thin metal films on insulator and nanostructured carbon-based devices, which are among the most actively researched materials in the field of nanoelectronics. The results are compared with images acquired by He+ ions, and we show that $${\rm N}_{2}^{{\plus}} $$ GFIS-FIB can offer improved material contrast even at very low imaging dose and is more sensitive to the surface roughness.

Keywords

SE imaginghelium ion microscopyGFIS-FIBnitrogen GFIS-FIB
Type
Instrumentation and Software
Information
Microscopy and Microanalysis , Volume 23 , Issue 4 , August 2017 , pp. 758 - 768
Copyright
© Microscopy Society of America 2017 

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