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RDF Analysis of Radiation-Amorphized SiC using a field Emission Scanning Electron Microscope
Published online by Cambridge University Press: 02 July 2020
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Abstract
Fast electrons are a particularly useful chemical and structural probe for the small sample volumes associated with ion- or fast electron-irradiation-induced amorphization, because of their much stronger interaction with matter than for X-rays or neutrons, and also because they can be readily focused to small probes. Three derivative signals are particularly rich in information: the angular distribution of scattered electrons (which is utilized in both diffraction and imaging studies); the energy loss spectrum of scattered electrons (electron energy loss spectroscopy, or EELS); and the emission spectrum of characteristic X-rays resulting from ionization energy losses (energy dispersive X-ray spectroscopy, or EDXS). We have applied the first two to the study of three amorphized compounds (AIPO4, SiO2, SiC) using MIT's Vacuum Generators HB603 field-emission (FEG) scanning transmission electron microscope (STEM), operating at 250 kV and equipped with a Gatan digital parallel-detection electron energy-loss spectrometer (digiPEELS).
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- Nanophase and Amorphous Materials
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- Copyright © Microscopy Society of America