Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-10T07:03:26.317Z Has data issue: false hasContentIssue false
  • English
  • Français

Selected Area Electron Beam Induced Deposition of Pt and W for EBSD Backgrounds

Published online by Cambridge University Press:  18 February 2019

William A. Osborn Open the ORCID record for William A. Osborn [Opens in a new window] ,
Mark J. McLean  and
Brian Bush
William A. Osborn*
Affiliation:
Materials Measurement Science Division, National Institute of Standards and Technology, 100 Bureau Drive, MS 8520, Gaithersburg, MD, USA
Mark J. McLean
Affiliation:
Materials Measurement Science Division, National Institute of Standards and Technology, 100 Bureau Drive, MS 8520, Gaithersburg, MD, USA
Brian Bush
Affiliation:
Materials Measurement Science Division, National Institute of Standards and Technology, 100 Bureau Drive, MS 8520, Gaithersburg, MD, USA
*
*Author for correspondence: William A. Osborn, E-mail: william.osborn@nist.gov
Get access

Abstract

Applying high-resolution electron backscatter diffraction (HR-EBSD) to materials without regions that are amenable to the acquisition of backgrounds for static flat fielding (background subtraction) can cause analysis problems. To address this difficulty, the efficacy of electron beam induced deposition (EBID) of material as a source for an amorphous background signal is assessed and found to be practical. Using EBID material for EBSD backgrounds allows single crystal and large-grained samples to be analyzed using HR-EBSD for strain and small angle rotation measurement.

Keywords

backgroundband contrastEBSDEBIDHR-EBSD
Type
Materials Science Applications
Information
Microscopy and Microanalysis , Volume 25 , Issue 1 , February 2019 , pp. 77 - 79
Creative Commons
This work is classified, for copyright purposes, as a work of the U.S. Government and is not subject to copyright protection within the United States.
Copyright
Copyright © Microscopy Society of America 2019

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Adams, BL, Wright, SI & Kunze, K (1993). MTA 4, 819–831.Google Scholar
Botman, A, Mulders, JJL & Hagen, CW (2009). Nanotechnol 20, 372001.Google Scholar
Britton, TB, Maurice, C, Fortunier, R, Driver, JH, Day, AP, Meaden, G, Dingley, DJ, Mingard, K & Wilkinson, AJ (2010). Ultramicroscopy 110, 1443–1453.Google Scholar
Dingley, DJ, Wright, SI & Nowell, MM (2005). Microsc Microanal 11, 528–529.Google Scholar
Goldstein, JI, Newbury, DE, Michael, JR, Ritchie, NWM, Scott, JHJ & Joy, DC (2017). Scanning Electron Microscopy and X-Ray Microanalysis, 4th ed. 2018, New York, NY: Springer.Google Scholar
Matteson, TL, Schwarz, SW, Houge, EC, Kempshall, BW & Giannuzzi, LA (2002). J Elec Mater 31, 33–39.Google Scholar
Michael, J & Goehner, R (1993). MSA Bulletin 23, 168–175.Google Scholar
Mulders, JJL, Belova, LM & Riazanova, A (2011). Nanotechnol 22, 055302.Google Scholar
Niel Christian Krieger Lassen (1994) Automated Determination of Crystal Orientations from Electron Backscattering Patterns, IMM-DTU.Google Scholar
Schwartz, AJ, Kumar, M, Adams, BL, Field, DP, eds (2009) Electron Backscatter Diffraction in Materials Science, 2nd ed. 2009, New York: Springer.Google Scholar
Wilkinson, AJ & Britton, TB (2012) Mater Today 15, 366–376.Google Scholar
Supplementary material: File

Osborn et al. supplementary material

Osborn et al. supplementary material 1

Download Osborn et al. supplementary material(File)
File 1.5 MB