Hostname: page-component-78c5997874-94fs2 Total loading time: 0 Render date: 2024-11-14T17:42:29.174Z Has data issue: false hasContentIssue false

Site-Specific TEM Specimen Preparation of Samples with Sub-Surface Features

Published online by Cambridge University Press:  23 September 2015

Julia I. Deitz
Affiliation:
Dept. of Materials Science & Engineering, The Ohio State University, Columbus, OH, 43210, USA
Santino D. Carnevale
Affiliation:
Dept. of Electrical & Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA
David W. McComb
Affiliation:
Dept. of Materials Science & Engineering, The Ohio State University, Columbus, OH, 43210, USA Institute for Materials Research, The Ohio State University, Columbus, OH, 43210, USA
Steven A. Ringel
Affiliation:
Dept. of Electrical & Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA Institute for Materials Research, The Ohio State University, Columbus, OH, 43210, USA
Tyler J. Grassman
Affiliation:
Dept. of Materials Science & Engineering, The Ohio State University, Columbus, OH, 43210, USA Dept. of Electrical & Computer Engineering, The Ohio State University, Columbus, OH, 43210, USA

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Carnevale, S., Deitz, J., Grassman, T., Carlin, J., Picard, Y., De Graef, M. & Ringel, S., "Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging. Applied Physics Letters 104(23), 232111 (2014).CrossRefGoogle Scholar
[2] Carnevale, S., Deitz, J., Grassman, T., Carlin, J., Picard, Y., De Graef, M. & Ringel, S., "Applications of Electron Channeling Contrast Imaging for the Rapid Characterization of Extended Defects in III-V/Si Heterostructures. IEEE Journal of Photovoltaics, accepted (2014). Early Access: <underline>http://dx.doi.org/10.1109/JPHOTOV.2014.2379111</underline>..Google Scholar