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Structures of a Stacking Fault and a Rotational Domain Boundary in CVD α-Silicon Nitride

Published online by Cambridge University Press:  08 August 2003

D.S. Zhou  and
T.E. Mitchell
D.S. Zhou
Affiliation:
Los Alamos National Laboratory, Center for Materials Science, MS-K765, Los Alamos, NM 87545, USA Presently at Applied Materials, Inc., 3100 Bowers Ave., M/S 0205, Santa Clara, CA 95054.
T.E. Mitchell
Affiliation:
Los Alamos National Laboratory, Center for Materials Science, MS-K765, Los Alamos, NM 87545, USA
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Abstract

A 1/2[0001](0001) stacking fault and a planar 60° rotational domain boundary on the (0001) plane in as-grown CVD α-Si3N4 crystals have been characterized by high-resolution electron microscopy and image simulation. As reported previously, two types of coherent boundaries have been observed in this material, namely, stacking faults and rotational domain boundaries. The former involves only a translational displacement, while the latter separates two grains by a 60° rotation in addition to a translation. Inasmuch as the difference resulting from the rotational component can hardly be detected by high-resolution electron microscopy, care must be taken to analyze them first by analytical electron microscopy. In this paper, these two types of boundaries are studied and structural models are constructed that give simulated images in satisfactory agreement with observed images.

Keywords

silicon nitridestacking faultsrotational domain boundariesHREMimage simulations
Type
Research Article
Information
Microscopy and Microanalysis , Volume 1 , Issue 6 , December 1995 , pp. 263 - 266
Copyright
© 1995 Microscopy Society of America

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