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Structures of Oxide Nanobelts and Nanowires

Published online by Cambridge University Press:  06 December 2002

Z.L. Wang ,
Z.W. Pan  and
Z.R. Dai
Z.L. Wang
Affiliation:
Center for Nanoscience and Nanotechnology, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
Z.W. Pan
Affiliation:
Center for Nanoscience and Nanotechnology, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
Z.R. Dai
Affiliation:
Center for Nanoscience and Nanotechnology, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245, USA
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Abstract

We have recently reported the synthesis of one-dimensional nanobelt structures of ZnO, SnO2, In2O3, CdO, Ga2O3, and PbO2 by evaporating the desired commercial metal oxide powders at high temperatures (Science (2001), 291, 1947). The as-synthesized oxide nanobelts are pure, structurally uniform, single crystalline, and most of them free from dislocations. The beltlike morphology appears to be a unique and common structural characteristic for the family of semiconducting oxides. In the present article, we focus on the twin and stacking fault planar defects found in oxide nanobelts and nanowires although they are rarely observed. Some interesting and unique growth morphologies are presented to illustrate the roles played by surface energy and kinetics in growth. It is shown that the surfaces of the oxide nanobelts are enclosed by the low-index, low-energy crystallographic facets. The growth morphology is largely dominated by the growth kinetics.

Keywords

oxide nanobeltsoxide nanowiresZnOSnO2In2O3CdO
Type
Research Article
Information
Microscopy and Microanalysis , Volume 8 , Issue 6 , December 2002 , pp. 467 - 474
Copyright
© 2002 Microscopy Society of America

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