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Three-Dimensional Electron Energy Deposition Modeling of Cathodoluminescence Emission near Threading Dislocations in GaN and Electron-Beam Lithography Exposure Parameters for a PMMA Resist

Published online by Cambridge University Press:  12 November 2012

Hendrix Demers ,
Nicolas Poirier-Demers ,
Matthew R. Phillips ,
Niels de Jonge  and
Dominique Drouin
Hendrix Demers
Affiliation:
Universite de Sherbrooke, Electrical and Computer Engineering Department, Sherbrooke, Quebec J1K 2R1, Canada
Nicolas Poirier-Demers
Affiliation:
Universite de Sherbrooke, Electrical and Computer Engineering Department, Sherbrooke, Quebec J1K 2R1, Canada
Matthew R. Phillips
Affiliation:
University of Technology, Microstructural Analysis Unit, Faculty of Science, Sydney, NSW 2007, Australia
Niels de Jonge
Affiliation:
Vanderbilt UniversitySchool of Medicine, Department of Molecular Physiology and Biophysics, Nashville, TN 37232-0615, USA
Dominique Drouin*
Affiliation:
Universite de Sherbrooke, Electrical and Computer Engineering Department, Sherbrooke, Quebec J1K 2R1, Canada
*
*Corresponding author. E-mail: Dominique.Drouin@USherbrooke.ca
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Abstract

The Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.

Keywords

cathodoluminescence (CL)electron-beam lithographyenergy depositionMonte Carlo simulationsresistthreading dislocationthree-dimensional (3D)
Type
Special Section: Cathodoluminescence
Information
Microscopy and Microanalysis , Volume 18 , Issue 6 , December 2012 , pp. 1220 - 1228
Copyright
Copyright © Microscopy Society of America 2012

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Footnotes

†

Current address: INM Leibniz-Institute for New Materials, Campus D2 2, 66123 Saarbrücken, Germany

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