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Backside Etching of GaAs Devices

Published online by Cambridge University Press:  14 March 2018

Jeffrey A. Mittereder
Jeffrey A. Mittereder*
Affiliation:
Naval Research Laboratory, Washington, D.C.

Extract

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The following is a technique for analyzing the area underneath a GaAs integrated circuit or discrete device which may aid in failure analysis. This procedure has been used in the past by the microelectronics community, and it is reviewed here for GaAs monolithic microwave integrated circuits (MMICs) and discrete devices. Because it is a destructive method, we use it in our lab after all other testing is completed. The substrate thickness of the GaAs is ∼4 mils (25 μm).

Type
Research Article
Information
Microscopy Today , Volume 5 , Issue 2 , March 1997 , pp. 18 - 19
Copyright
Copyright © Microscopy Society of America 1997