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A Method to Characterize and Correct Elliptical Distortion in Electron Diffraction Patterns

Published online by Cambridge University Press:  14 March 2018

Vincent D.-H. Hou  and
Du Li
Vincent D.-H. Hou*
Affiliation:
Micron Technology, Inc., Boise, Idaho
Du Li
Affiliation:
Micron Technology, Inc., Boise, Idaho
*
vdhou@micron.com

Extract

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One of the main obstacles to performing electron crystallography analysis in a TEM is that the acquired electron diffraction data often exhibits some form of distortion introduced by the lens system. Recognizing this problem, Capitani et al. has proposed a method to detect such distortion, which is primarily elliptical, by using a single crystal standard. Once such elliptical distortion is characterized, electron diffraction data acquired later can then be corrected by means of image processing. However, it may be desirable to correct such distortion at the instrument level. In this article, a different approach to measuring diffraction elliptical distortion is proposed by characterizing diffraction ring patterns and it is demonstrated that by varying the objective lens stigmation settings, it is possible to eliminate this elliptical distortion completely.

Type
Research Article
Information
Microscopy Today , Volume 16 , Issue 3 , May 2008 , pp. 36 - 41
Copyright
Copyright © Microscopy Society of America 2008

References

1. Capitani, G.C., Oleynikov, P., Hovmoller, S., Mellin, M., Ultramicroscopy, 106 (2006) 66.CrossRefGoogle Scholar
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5.Vincent. D.-H Hou, “Distortion Minimization of CBED Patterns in TEM”, paper submitted to MM2008 meeting.Google Scholar