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Scanning Transmission Electron Microscopy for Critical Dimension Monitoring in Wafer Manufacturing

Published online by Cambridge University Press:  14 March 2018

Haifeng Wang ,
Jason Fang ,
Jason Arjavac  and
Rudy Kellner
Haifeng Wang*
Affiliation:
Western Digital Corporation, Fremont, CA
Jason Fang
Affiliation:
Western Digital Corporation, Fremont, CA
Jason Arjavac
Affiliation:
FEI Company, Hillsboro, OR
Rudy Kellner
Affiliation:
FEI Company, Hillsboro, OR
*
Haifeng.Wang@wdc.com

Extract

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Automated scanning transmission electron microscopy (STEM) metrology provides critical dimension (CD) measurements an order of magnitude more precise than comparable scanning electron microscopy (SEM) measurements. New developments in automation now also provide throughput and response time sufficient to support high volume microelectronic manufacturing processes. The newly developed methodology includes automated, focused ion beam (FIB) based sample preparation; innovative, ex-situ sample extraction; and automated metrology. Although originally developed to control the production of thin film magnetic heads for data storage, the technique is fully applicable to any wafer-based manufacturing process.

Type
Research Article
Information
Microscopy Today , Volume 16 , Issue 1 , January 2008 , pp. 24 - 27
Copyright
Copyright © Microscopy Society of America 2008