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Contact Resistance Improvement for Advanced Logic by Integration of Epi, Implant and Anneal Innovations

Published online by Cambridge University Press:  11 November 2019

Fareen Adeni Khaja
Fareen Adeni Khaja*
Affiliation:
Applied Materials, 974 E Arques Ave., Sunnyvale, CA94041, USA
*
*Phone : +1-408-563-7178 E-mail : fareen_adeni_khaja@amat.com
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Abstract

As advanced CMOS scaling with FinFETs continues beyond the 10/7nm nodes, contact resistance (Rc) remains a dominant component affecting device performance. The FinFET Source/Drain (S/D) contact area has become smaller with fin pitch scaling, resulting in drastically increased Rc. To achieve higher drive currents and fully realize the performance gain from FinFET architectural changes, it is critical to continue to reduce contact resistivity (ρc) < 1.0x10-9 Ω.cm2 for both NMOS and PMOS. In this paper, we review the recent trends for ρc reduction for advanced CMOS devices and discuss approaches that have demonstrated reduction in ρc, such as in-situ heavily doped epitaxial films for S/D, advanced ion implantation and laser anneals. The implant techniques include pre-amorphization implants (PAI), dopant boosting implants, cryogenic (-100°C) implants for damage engineering and plasma doping (PLAD) for conformal doping of high aspect ratio (HAR) contacts. With such high levels of doping from epi and implants, advanced laser anneals are key for epitaxial regrowth and formation of metastable alloys for dopant supersaturation or segregation in top layers. Millisecond laser anneal (MSA) improves dopant activation and nanosecond laser anneal (NLA) permits superactivation, and both have become key enablers for ρc reduction. This paper also reviews two alternative contact approaches: dual silicide scheme and wrap-around contact (WAC), as potential pathways to further reduce Rc for advanced CMOS nodes.

Keywords

epitaxyion-implantationlaser annealing
Type
Review Article
Information
MRS Advances , Volume 4 , Issue 48: Electronics and Photonics , 2019 , pp. 2559 - 2576
Copyright
Copyright © Materials Research Society 2019 

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