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Heteroepitaxy of Ge on Cube-Textured Ni(001) Foils Through CaF2 Buffer Layer

Published online by Cambridge University Press:  15 July 2016

L. Chen ,
Z.-H. Lu ,
T.-M. Lu ,
I. Bhat ,
S.B. Zhang ,
A. Goyal ,
L.H. Zhang ,
K. Kisslinger  and
G.-C. Wang
L. Chen
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
Z.-H. Lu
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
T.-M. Lu
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
I. Bhat
Affiliation:
Electrical, Computer and Systems Engineering Department, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
S.B. Zhang
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
A. Goyal
Affiliation:
TapeSolar Inc. and U. at Buffalo, Research and education in eNergy, Environment, and Water (RENEW) Institute, Buffalo, NY 14260
L.H. Zhang
Affiliation:
Brookhaven National Lab, Center for Functional Nanomaterials, Upton, NY 11973
K. Kisslinger
Affiliation:
Brookhaven National Lab, Center for Functional Nanomaterials, Upton, NY 11973
G.-C. Wang*
Affiliation:
Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY 12180-3950
*
*(Email: wangg@rpi.edu)
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Abstract

Epitaxial Ge films are useful as a substrate for high-efficiency solar cell applications. It is possible to grow epitaxial Ge films on low cost, cube textured Ni(001) sheets using CaF2(001) as a buffer layer. Transmission electron microscopy (TEM) analysis indicates that the CaF2(001) lattice has a 45o in-plane rotation relative to the Ni(001) lattice. The in-plane epitaxy relationships are CaF2[110]//Ni[100] and CaF2[ $\bar 1$ 10]//Ni[010]. Energy dispersive spectroscopy (EDS) shows a sharp interface between Ge/CaF2 as well as between CaF2/Ni. Electron backscatter diffraction (EBSD) shows that the Ge(001) film has a large grain size (∼50 μm) with small angle grain boundaries (< 8o). The epitaxial Ge thin film has the potential to be used as a substrate to grow high quality III-V and II-VI semiconductors for optoelectronic applications.

Keywords

physical vapor deposition (PVD)thin filmGe
Type
Articles
Information
MRS Advances , Volume 1 , Issue 43: Energy and Environment , 2016 , pp. 2947 - 2952
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

King, R. R., Law, D. C., Edmondson, K. M., Fetzer, C. M., Kinsey, G. S., Yoon, H., Sherif, R. A., and Karam, N. H., Appl. Phys. Lett. 90, 183516 (2007).Google Scholar
Nakamura, Y., Murayama, A., and Ichikawa, M., Cryst. Growth Des. 11, 3301 (2011).Google Scholar
Lee, Kwang Hong, Jandl, Adam, Tan, Yew Heng, Fitzgerald, Eugene A., and Tan, Chuan Seng, AIP Advances 3, 092123 (2013).Google Scholar
Liu, J., Kim, H. J., Hul’ko, O., and Xie, Y. H., J. of Appl. Phys. 96 (1), 916 (2004).Google Scholar
Ma, Quan-Bao, Lieten, Ruben, Leys, Maarten, Degroote, Stefan, Germain, Marianne, and Borghs, Gustaaf, Journal of Crystal Growth 331, 40 (2011).Google Scholar
Goyal, A., Ren, S.X., Specht, E.D., Kroeger, D.M., Feenstra, R., Norton, D., Paranthaman, M., Lee, D.F., and Christen, D.K., Micron 30, 463 (1999).Google Scholar
Dutta, Pavel, Rathi, Monika, Yao, Yao, Gao, Ying, Majkic, Goran, Iliev, Milko, Martinez, James, Holzapfeld, Bernhard, and Selvamanickama, Venkat, RSC Adv. 4, 21042 (2014).CrossRefGoogle Scholar
Chen, Liang, Xie, Weiyu, Wang, Gwo-Ching, Bhat, Ishwara, Zhang, Shengbai, Goyal, Amit, and Lu, Toh-Ming, Thin Solid Films 603, 428 (2016).CrossRefGoogle Scholar
Gaire, C., Palazzo, J., Bhat, I., Goyal, A., Wang, G.-C., and Lu, T.-M., J. Cryst. Growth 343, 33 (2012).Google Scholar
Selvamanickam, V., Sambandam, S., Sundarama, A., Lee, S., Rar, A., Xiong, X., Alemu, A., Boney, C., and Freundlich, A., Journal of Crystal Growth 311, 4553 (2009).CrossRefGoogle Scholar
Goyal, A., {100}<100> or 45°-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices. US Patent 8178221: May 15 2012.+or+45°-rotated+{100}<100>,+semiconductor-based,+large-area,+flexible,+electronic+devices.+US+Patent+8178221:+May+15+2012.>Google Scholar
Debokx, P.K., Labohm, F., Gijzeman, O.L.J., Bootsma, G.A., Geus, J.W., Appl Surf Sci. 5 (3), 321 (1980).Google Scholar
Humphreys, F.J., J. of Mater. Sci. 36, 3833 (2001).Google Scholar
Gaire, C., Clemmer, P.C., Li, H.-F., Parker, T.C., Snow, P., Bhat, I., Lee, S., Wang, G.-C., and Lu, T.-M., Journal of Crystal Growth 312, 607 (2010).Google Scholar
Findikoglu, A.T., Choi, W., Matias, V., Holesinger, T.G., Jia, Q.X., and Peterson, D.E., Adv Mater. 17, 1527 (2005).Google Scholar
Choi, W., Matias, V., Lee, J.-K., and Findikoglub, Alp T., Appl. Phys. Lett. 87, 152104 (2005).CrossRefGoogle Scholar
Mason, J.K. and Schuh, C.A., Acta Materialia 57.14: 4186 (2009).Google Scholar
Wang, G.-C., Zhang, L.H., Kisslinger, Kim, Gaire, C., Goyal, A., Bhat, I., and Lu, T.-M., Thin Solid Films 531, 217 (2013).CrossRefGoogle Scholar
Nagai, Haruo, J. Appl. Phys. 45, 3789 (1974).Google Scholar
Dutta, P., Rathi, M., Zheng, N., Gao, Y., Yao, Y., Martinez, J., Ahrenkiel, P., and Selvamanickam, V., Appl. Phys. Lett. 105, 092104 (2014).Google Scholar
Bhat, Ishwara and Wang, Wen-Sheng, Appl. Phys. Lett. 64, 566 (1994).Google Scholar
Lord, Robert, Su, P., Bhat, Ishwara, Zhang, Shengbai, Lu, Toh-Ming, and Wang, Gwo-Ching Materials Express 2, 095017 (2015).Google Scholar