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Band Alignment of CdS/Cu2ZnSnSe4 Heterointerface and Solar Cell Performances

Published online by Cambridge University Press:  24 April 2017

Takehiko Nagai ,
Shinho Kim ,
Hitoshi Tampo ,
Kang Min Kim ,
Hajime Shibata ,
Shin’ichi Takaki ,
Kenta Kawasaki ,
Suehiro Kawamura ,
Takuya Shimamura  and
Koji Matsubara
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Takehiko Nagai*
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Shinho Kim
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Hitoshi Tampo
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Kang Min Kim
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Hajime Shibata
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Shin’ichi Takaki
Affiliation:
Kagoshima University, Korimoto 1-21-40, Kagoshima 890-0065, Japan
Kenta Kawasaki
Affiliation:
Kagoshima University, Korimoto 1-21-40, Kagoshima 890-0065, Japan
Suehiro Kawamura
Affiliation:
Kagoshima University, Korimoto 1-21-40, Kagoshima 890-0065, Japan
Takuya Shimamura
Affiliation:
Kagoshima University, Korimoto 1-21-40, Kagoshima 890-0065, Japan
Koji Matsubara
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Shigeru Niki
Affiliation:
Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2 Umezono 1-1-1, Tsukuba, Ibaraki 305-8568, Japan
Norio Terada
Affiliation:
Kagoshima University, Korimoto 1-21-40, Kagoshima 890-0065, Japan
*
*(Email: nagai-takehi@aist.go.jp)
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Abstract

We determined that the conduction band offset (CBO) and the valence band offset (VBO) at the CdS/ Cu2ZnSnSe4 (CZTSe) heterointerface are +0.56 and +0.89eV, respectively, by using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS) and inversed photoemission spectroscopy (IPES). A positive CBO value, so-called “spike” structure, means that the position of conduction band becomes higher than that of absorber layer. The evaluated CBO of +0.56 eV suggests that the conduction band alignment at CdS/CZTSe interface is enough to become an electron barrier. Despite such a large spike structure in the conduction band at the interface, a conversion efficiency of 8.7 % could be obtained for the CdS/CZTSe heterojunction solar cells.

Keywords

x-ray photoelectron spectroscopy (XPS)photovoltaicelectronic structure
Type
Articles
Information
MRS Advances , Volume 2 , Issue 53: Energy Storage and Conversion , 2017 , pp. 3157 - 3162
Copyright
Copyright © Materials Research Society 2017 

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References

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