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Characterization of InN-In0.25Ga0.75N Quantum Well Laser with In0.4Al0.6N Layers for 1300 nm Band

Published online by Cambridge University Press:  16 May 2016

Md. Mobarak Hossain Polash  and
Kamruzzaman Khan
Md. Mobarak Hossain Polash
Affiliation:
Dept. of EEE, Bangladesh University of Engineering & Technology, Dhaka, Bangladesh.
Kamruzzaman Khan*
Affiliation:
Dept. of EECS, University of Toledo, Toledo, Ohio – 43607, U.S.A.
*
*(Email: Kamruzzaman.Khan@rockets.utoledo.edu)
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Abstract

A wurtzite-strained nitride Quantum Well Laser has been characterized for short distance communication wavelength. InN and In0.25Ga0.75N have been chosen as well material and barrier material respectively with In0.4Al0.6N SCH layers at the end of barrier layers to improve the carrier and photon confinement within the active region. This structure shows less compressive strain (7.33%) with respect to previously proposed structure which makes the structure more suitable for fabrication. To obtain the electronic band structure, self-consistent method with k.p formalism has been performed where valence band mixing effect, strain effect and spontaneous and piezoelectric polarization effect has been included. From the electronic characteristics, the optical properties have been performed with numerical model. From the optical properties, the structure has been found as TE polarized with C1-HH1, C1-LH1, C2-HH1 and C2-LH1 dominating transition elements. From the performance of the numerical model, 4731.98 cm−1 optical gain for TE polarization at 1315.5 nm emission wavelength and 8.017×1027 cm−3s−1eV−1 spontaneous emission rate at 1301.7nm wavelength have been found for 12Å well width, 17Å barrier width and 52Å SCH layer width at 5×1019 cm−3 carrier density. The obtained properties have been shown a good agreement with previously published works.

Keywords

nitrideoptoelectroniclaser
Type
Articles
Information
MRS Advances , Volume 1 , Issue 28: Nanotechnology , 2016 , pp. 2051 - 2057
Copyright
Copyright © Materials Research Society 2016 

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