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Chemical Vapor Transport Deposition of Stable Cubic CsPbI3 Optical Films on the Porous Alumina Substrate

Published online by Cambridge University Press:  10 April 2019

Cong Zhao ,
Shichao Zhao ,
Yuanfang Zhao ,
Fang He ,
Ripeng Luo ,
Jingzhou Li ,
Shixi Zhao ,
Guodan Wei  and
Feiyu Kang
Cong Zhao
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China
Shichao Zhao
Affiliation:
College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou, 310018, P. R. China
Yuanfang Zhao
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China
Fang He
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China
Ripeng Luo
Affiliation:
Renewable Energy Materials and Devices, University of Electronic Science and Technology of China, Chengdu, 611731P. R. China
Jingzhou Li
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China
Shixi Zhao
Affiliation:
Graduate School at Shenzhen, Tsinghua University, Shenzhen, 518055, P. R. China
Guodan Wei*
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China
Feiyu Kang
Affiliation:
Msinghua-Berkeley Shenzhen Institute(TBSI), Tsinghua University, Shenzhen, 518057, P. R. China Graduate School at Shenzhen, Tsinghua University, Shenzhen, 518055, P. R. China
*
*(Email: weiguodan@sz.tsinghua.edu.cn)
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Abstract

Cesium lead iodide perovskite (CsPbI3) with excellent optical and electrical properties have attracted numerous academic attentions. Specifically, the black cubic phase CsPbI3 with a direct band gap of 1.74 eV has been most appropriate materials for various optoelectronic applications, especially for photovoltaic (PV), Light-Emitting Diodes (LED) and photodetector applications1. However, the preferred cubic phase of bulk CsPbI3 (α-CsPbI3) is usually only stable at high temperatures and it will undergo an immediate phase transformation to orthorhombic phase (δ-CsPbI3) after fabrication at room temperature. In this work, we have discovered a convenient CVD method to investigate the growth behavior of the cubic α-CsPbI3 film on the porous alumina substrate. The lead iodide and cesium iodide were used as the precursors for the deposition of CsPbI3. The porous alumina with high surface area and large pore volume was used as growth substrate. It was shown that the porous alumina promoted the growth of CsPbI3 film by absorbing the precursor and increasing the nucleation density. The prepared CsPbI3 film emitted strong and stable red light under ultraviolet light excitation at room temperature and ambient atmosphere. The lead iodide was absorbed on the surface of the porous alumina firstly then reacted with cesiumiodide to form the CsPbI3. The successful preparation of the CsPbI3 by the direct CVD method paves the way for its large scale growth and application in optoelectronic devices.

Keywords

chemical vapor deposition (CVD) (deposition)crystallizationperovskitesphotoemission
Type
Articles
Information
MRS Advances , Volume 4 , Issue 36: Energy and Sustainability , 2019 , pp. 1973 - 1979
Copyright
Copyright © Materials Research Society 2019 

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References

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